Power switching Huixin H12N90 N Channel MOSFET featuring low gate charge and robust avalanche testing
Key Attributes
Model Number:
H12N90
Product Custom Attributes
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
750mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Output Capacitance(Coss):
260pF
Pd - Power Dissipation:
300W
Input Capacitance(Ciss):
2.7nF
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
H12N90
Package:
TO-3PB
Product Description
Product Overview
The H12N90 is a high-performance N-Channel MOSFET designed for power switching applications. It features low gate charge, low Crss, and is 100% avalanche tested, making it suitable for demanding applications. This RoHS compliant device offers robust performance and reliability.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: RoHS compliant, UL
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| PD | Power Dissipation | (TC = 25C) | -- | -- | 300 | W |
| Derate Above 25C | -- | -- | 1.4 | W/C | ||
| TJ, TSTG | Operating and Storage Temperature Range | -- | -55 | -- | +150 | C |
| TL | Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds | -- | -- | -- | 300 | C |
| RJC | Thermal Resistance, Junction to Case, Max | -- | -- | 0.42 | C/W | |
| RJA | Thermal Resistance, Junction to Ambient, Max | -- | -- | 40 | C/W | |
| VDSS | Drain to Source Voltage | -- | -- | -- | 900 | V |
| ID | Drain Current - Continuous | (TC = 25C) | -- | -- | 12 | A |
| ID | Drain Current - Continuous | (TC = 100C) | -- | -- | 7.5 | A |
| IDM | Drain Current - Pulsed (Note 1) | -- | -- | -- | 48 | A |
| VGSS | Gate to Source Voltage | -- | -30 | -- | +30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | -- | -- | 1200 | mJ | |
| IAR | Avalanche Current (Note 1) | -- | -- | 11.4 | A | |
| EAR | Repetitive Avalanche Energy (Note 1) | -- | -- | 30 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | -- | -- | 5.0 | V/ns | |
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0 V, ID = 250 A | 900 | -- | -- | V |
| BVDSS / TJ | Breakdown Voltage Temperature Coefficient | ID = 250 A, Referenced to 25C | -- | 1.0 | -- | V/C |
| IDSS | Zero Gate Voltage Drain Current | VDS = 900 V, VGS = 0 V | -- | -- | 1.0 | A |
| IDSS | Zero Gate Voltage Drain Current | VDS = 720 V, TC = 125C | -- | -- | 125 | A |
| IGSSF | Gate-Body Leakage Current, Forward | VGS = 30 V, VDS = 0 V | -- | -- | 100 | nA |
| IGSSR | Gate-Body Leakage Current, Reverse | VGS = -30 V, VDS = 0 V | -- | -- | -100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250 A | 2.0 | -- | 4.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10 V, ID = 5.7 A | -- | 0.75 | 0.96 | |
| gFS | Forward Transconductance | VDS = 25 V, ID = 5.7 A | -- | 32 | -- | S |
| Ciss | Input Capacitance | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | -- | 2700 | 3500 | pF |
| Coss | Output Capacitance | -- | -- | 260 | 340 | pF |
| Crss | Reverse Transfer Capacitance | -- | -- | 30 | 40 | pF |
| td(on) | Turn-On Delay Time | VDD = 450 V, ID = 11.4 A, RG = 25 (note 4) | -- | 65 | 140 | ns |
| tr | Turn-On Rise Time | -- | -- | 135 | 280 | ns |
| td(off) | Turn-Off Delay Time | -- | -- | 165 | 340 | ns |
| tf | Turn-Off Fall Time | -- | -- | 90 | 190 | ns |
| Qg | Total Gate Charge | VDS = 720 V, ID = 11.4 A, VGS = 10 V (note 4) | -- | 72 | 94 | nC |
| Qgs | Gate-Source Charge | -- | -- | 16 | -- | nC |
| Qgd | Gate-Drain Charge | -- | -- | 35 | -- | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | -- | -- | -- | 11.4 | A |
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | -- | -- | -- | 45.6 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0 V, IS = 11.4 A | -- | -- | 1.4 | V |
| trr | Reverse Recovery Time | VGS = 0 V, IS = 11.4 A, dIF / dt = 100 A/s | -- | 850 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | -- | 11.2 | -- | C |
2507301400_Huixin-H12N90_C49435647.pdf
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