Fast Switching N Channel and P Channel MOSFETs HUASHUO HSSK8402 Featuring Ultra Low On Resistance for Load Switch
Key Attributes
Model Number:
HSSK8402
Product Custom Attributes
Drain To Source Voltage:
65V
Current - Continuous Drain(Id):
130mA
RDS(on):
2.3Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.9pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
7.4pF
Input Capacitance(Ciss):
22pF
Pd - Power Dissipation:
380mW
Gate Charge(Qg):
600pC@4.5V
Mfr. Part #:
HSSK8402
Package:
SOT-363
Product Description
Product Overview
The HSSK8402 is a series of N-Channel and P-Channel Fast Switching MOSFETs designed with advanced trench technology. This technology ensures excellent RDS(ON) and low gate charge, making it suitable for ultra-low on-resistance applications. The HSSK8402 is ideal for use as a load switch or in PWM applications.
Product Attributes
- Brand: HSSK
- Type: N-Ch and P-Ch Fast Switching MOSFETs
Technical Specifications
General Characteristics
| Parameter | Rating | Units |
|---|---|---|
| Continuous Drain Current, VGS @ 10V (TA=25) | 0.13 / -0.13 | A |
| Continuous Drain Current, VGS @ 10V (TA=70) | 0.1 / -0.1 | A |
| Pulsed Drain Current | 0.5 / -0.5 | A |
| Total Power Dissipation (TA=25) | 0.38 | W |
| Storage Temperature Range | -55 to 150 | |
| Operating Junction Temperature Range | -55 to 150 |
N-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 65 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=0.13A | --- | 1.7 | 2.3 | |
| VGS=4.5V , ID=0.13A | --- | 2.1 | 2.6 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.0 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | -5.24 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=48V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 10 | uA |
| gfs | Forward Transconductance | VDS=30V , ID=0.13A | --- | 160 | --- | mS |
| Qg | Total Gate Charge (4.5V) | VDS=30V , VGS=4.5V , ID=0.13A | --- | 0.6 | --- | nC |
| Qgs | Gate-Source Charge | --- | 0.2 | --- | ||
| Qgd | Gate-Drain Charge | --- | 0.15 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=1, ID=0.13A | --- | 6.5 | --- | ns |
| Tr | Rise Time | --- | 12 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 13 | --- | ||
| Tf | Fall Time | --- | 14 | --- | ||
| Ciss | Input Capacitance | VDS=30V , VGS=0V , f=1MHz | --- | 19 | --- | pF |
| Coss | Output Capacitance | --- | 7.4 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 4.9 | --- |
N-Channel Diode Characteristics
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VSD | Diode Forward Voltage | VGS=0V , IS=0.13A , TJ=25 | --- | --- | 1.2 | V |
P-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -55 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-0.13A | --- | 1.0 | 1.8 | |
| VGS=-4.5V , ID=-0.13A | --- | 1.2 | 2.0 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.0 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | 4.56 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | --- | --- | -1 | uA |
| VDS=-48V , VGS=0V , TJ=55 | --- | --- | -5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=-25V , ID=-0.13A | --- | 60 | --- | S |
| Td(on) | Turn-On Delay Time | VDD=-15V , VGEN=-5V , RL=50, ID=-0.13A | --- | 2.1 | --- | ns |
| Tr | Rise Time | --- | 1.1 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 16 | --- | ||
| Tf | Fall Time | --- | 8 | --- | ||
| Ciss | Input Capacitance | VDS=-5V , VGS=0V , f=1MHz | --- | 22 | --- | pF |
| Coss | Output Capacitance | --- | 7.3 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 4 | --- |
P-Channel Diode Characteristics
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1.2 | V |
2508150931_HUASHUO-HSSK8402_C22359214.pdf
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