Dual N channel 20V fast switching MOSFET HUASHUO HSSK7800 with low on resistance and high ESD rating
Key Attributes
Model Number:
HSSK7800
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
160mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.5pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
90pF@10V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
1.5nC@4.5V
Mfr. Part #:
HSSK7800
Package:
SOT-363
Product Description
Product Overview
The HSSK7800 is a dual N-channel, 20V fast switching MOSFET designed to offer an optimal balance of rapid switching speeds, low on-resistance, and cost-effectiveness. It meets RoHS and Green Product requirements with full function reliability approval. Ideal for PWM applications and load switching, this MOSFET also features an ESD rating of over 2000V HBM.
Product Attributes
- Brand: WILLAS
- Certifications: RoHS, Green Product
- ESD Rating: >2000V HBM
Technical Specifications
| Part Number | Package Code | Packaging | VDS (V) | RDS(ON), typ (m) | ID (A) | BVDSS (V) | RDS(ON), typ (m) @ VGS=4.5V, ID=1A | RDS(ON), typ (m) @ VGS=2.5V, ID=0.5A | VGS(th) (V) | IDSS (uA) | IGSS (nA) | Qg (nC) | Qgs (nC) | Qgd (nC) | Td(on) (ns) | Tr (ns) | Td(off) (ns) | Tf (ns) | Ciss (pF) | Coss (pF) | Crss (pF) | VSD (V) | PD@TA=25 (W) | RJA (/W) | TSTG () | TJ () |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HSSK7800 | SOT-363 | 3000/Tape&Reel | 20 | 160 | 1 | 20 (Min) | 120-160 | 200-280 | 0.5-1.2 | <1 (Max) | ±100 (Max) | 1.5 | 0.5 | 0.3 | 6 | 28 | 47 | 33 | 90 | 28 | 9.5 | <1.2 (Max) | 0.35 | 360 | -55 to 150 | -55 to 150 |
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gate-Source Voltage | ±8 | V |
| ID@TA=25 | Continuous Drain Current | 1 | A |
| IDM | Pulsed Drain Current | 4 | A |
2410122027_HUASHUO-HSSK7800_C28314503.pdf
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