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quality Switching Performance with HXY MOSFET AON7544 N Channel Enhancement Mode MOSFET and Low Gate Charge factory
quality Switching Performance with HXY MOSFET AON7544 N Channel Enhancement Mode MOSFET and Low Gate Charge factory

Switching Performance with HXY MOSFET AON7544 N Channel Enhancement Mode MOSFET and Low Gate Charge

Key Attributes
Model Number: AON7544
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
315pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
62.5W
Input Capacitance(Ciss):
3.075nF@15V
Gate Charge(Qg):
31.6nC@4.5V
Mfr. Part #:
AON7544
Package:
DFN3x3-8L
Product Description

Product Overview

The AON7544 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.

Product Attributes

  • Brand: HUAXUANYANG HXY
  • Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
  • Package: DFN3X3-8L
  • Type: N-Channel Enhancement Mode MOSFET

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1 60 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1 42 A
IDM Pulsed Drain Current2 192 A
EAS Single Pulse Avalanche Energy3 144.7 mJ
IAS Avalanche Current 53.8 A
PD@TC=25 Total Power Dissipation4 62.5 W
PD@TA=25 Total Power Dissipation4 4.5 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-ambient1 62 /W
RJC Thermal Resistance Junction-Case1 2.4 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
BVDSS/TJ BVDSS Temperature Coefficient Reference to 25 , ID=1mA --- 0.0213 --- V/
RDS(ON) Static Drain-Source On- Resistance2 VGS=10V , ID=30A --- 4 5.5 m
RDS(ON) Static Drain-Source On- Resistance2 VGS=4.5V , ID=15A 5.2 6
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 --- 2.5 V
VGS(th) VGS(th) Temperature Coefficient --- -5.8 --- mV/
IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25 --- --- 1 uA
IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=55 --- --- 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA
gfs Forward Transconductance DS=5V , ID=30A --- 26.5 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.4 ---
Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=15A --- 31.6 --- nC
Qgs Gate-Source Charge --- 8.6 ---
Qgd Gate-Drain Charge --- 11.7 ---
Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3 ID=15A --- 9 --- ns
Tr Rise Time --- 19 ---
Td(off) Turn-Off Delay Time --- 58 ---
Tf Fall Time --- 15.2 ---
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 3075 --- pF
Coss Output Capacitance --- 400 ---
Crss Reverse Transfer Capacitance --- 315 ---
IS Continuous Source Current1,6 VG=VD=0V , Force Current --- --- 60 A
ISM Pulsed Source Current2,6 --- --- 192 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 --- --- 1 V

2509181605_HXY-MOSFET-AON7544_C5261066.pdf
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