Dual N Channel 60V Fast Switching MOSFET HUASHUO HSBB6214 with Low Gate Charge and RoHS Compliant Green Product
Key Attributes
Model Number:
HSBB6214
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
42mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
46pF@15V
Number:
2 N-Channel
Input Capacitance(Ciss):
1.027nF@15V
Pd - Power Dissipation:
21W
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
HSBB6214
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB6214 is a dual N-channel 60V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent Cdv/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Product Type: Dual N-Channel Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 16 | A | |||
| ID@TC=70 | Continuous Drain Current, VGS @ 10V1 | 10 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 4.5 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 3.6 | A | |||
| IDM | Pulsed Drain Current2 | 32 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 22 | mJ | |||
| IAS | Avalanche Current | 21 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 1.7 | W | |||
| PD@TC=25 | Total Power Dissipation4 | 21 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | 75 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 6 | /W | |||
| Product Summary | ||||||
| Model | HSBB6214 | |||||
| Type | Dual N-Ch | |||||
| Voltage | 60V | |||||
| Switching | Fast Switching | |||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.044 | V/ | ||
| RDS(ON),MAX | Static Drain-Source On-Resistance2 | VGS=10V , ID=5A | 42 | m | ||
| VGS=4.5V , ID=5A | 52 | m | ||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.7 | 2.5 | V |
| VGS(th)/TJ | VGS(th) Temperature Coefficient | -4.8 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=48V , VGS=0V , TJ=55 | 5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=5A | 28 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 2.5 | |||
| Qg | Total Gate Charge | VDS=48V , VGS=10V , ID=4A | 19 | nC | ||
| Qgs | Gate-Source Charge | 2.6 | nC | |||
| Qgd | Gate-Drain Charge | 4.1 | nC | |||
| td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3, ID=4A | 3 | ns | ||
| tr | Rise Time | 34 | ns | |||
| td(off) | Turn-Off Delay Time | 23 | ns | |||
| tf | Fall Time | 6 | ns | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 1027 | pF | ||
| Coss | Output Capacitance | 65 | pF | |||
| Crss | Reverse Transfer Capacitance | 46 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | 16 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| trr | Reverse Recovery Time | IF=4A , dI/dt=100A/s , TJ=25 | 12.1 | nS | ||
| Qrr | Reverse Recovery Charge | 6.7 | nC | |||
Notes:
- 1. Data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2. Data tested by pulsed, pulse width 300s, duty cycle 2%.
- 3. EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.1mH, IAS=21A.
- 4. Power dissipation is limited by 150 junction temperature.
- 5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2507281508_HUASHUO-HSBB6214_C5341687.pdf
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