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quality Complementary MOSFET series HUASHUO HSBA3903 designed for performance in power management applications factory
quality Complementary MOSFET series HUASHUO HSBA3903 designed for performance in power management applications factory

Complementary MOSFET series HUASHUO HSBA3903 designed for performance in power management applications

Key Attributes
Model Number: HSBA3903
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
30A;24A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
18mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
115pF@15V
Number:
1 N-Channel + 1 P-Channel
Pd - Power Dissipation:
19W
Input Capacitance(Ciss):
930pF@15V
Gate Charge(Qg):
7.2nC@4.5V
Mfr. Part #:
HSBA3903
Package:
PRPAK5x6-8L
Product Description

Product Overview

The HSBA3903 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. The HSBA3903 series meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.

Product Attributes

  • Brand: HS-Semi
  • Certifications: RoHS, Green Device Available
  • Technology: Advanced high cell density Trench technology
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Model HSBA3903
Parameter Conditions N-Ch P-Ch Units
Absolute Maximum Ratings
VDS Drain-Source Voltage 30 -30 V
VGS Gate-Source Voltage 20 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1 30 -24 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1 18 -19 A
IDM Pulsed Drain Current2 60 -50 A
EAS Single Pulse Avalanche Energy3 22 45 mJ
IAS Avalanche Current 21 -30 A
PD@TC=25 Total Power Dissipation4 19 19 W
TSTG Storage Temperature Range -55 to 150 -55 to 150
TJ Operating Junction Temperature Range -55 to 150 -55 to 150
Thermal Data
RJA Thermal Resistance Junction-Ambient --- 62 /W
RJC Thermal Resistance Junction-Case1 --- 6.6 /W
N-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=10A --- 18 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 to 2.5 --- V
IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25 --- 1 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- 100 nA
Qg Total Gate Charge (4.5V) VDS=20V , VGS=4.5V , ID=10A 7.2 --- nC
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz 572 --- pF
Coss Output Capacitance 81 --- pF
Crss Reverse Transfer Capacitance 65 --- pF
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- 20 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 --- 1.2 V
P-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-12A --- 30 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 to -2.5 --- V
IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25 --- 1 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- 100 nA
Qg Total Gate Charge (-4.5V) VDS=-20V , VGS=-4.5V , ID=-7A 9.8 --- nC
Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz 930 --- pF
Coss Output Capacitance 148 --- pF
Crss Reverse Transfer Capacitance 115 --- pF
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- -20 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25 --- -1.2 V

2410121525_HUASHUO-HSBA3903_C7543704.pdf
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