Dual N-Channel Enhancement Mode MOSFET HXY MOSFET IRF7103PBF-HXY with Low Gate Charge and Excellent RDS
Key Attributes
Model Number:
IRF7103PBF-HXY
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
6.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
48mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
116pF
Number:
2 N-Channel
Input Capacitance(Ciss):
1.92nF
Pd - Power Dissipation:
2.1W
Output Capacitance(Coss):
155pF
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
IRF7103PBF-HXY
Package:
SOP-8
Product Description
Product Overview
The IRF7103PBF is a Dual N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V, making it suitable for battery protection and other switching applications.
Product Attributes
- Brand: HXY
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: SOP-8
- Marking: IRF7103PBF
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1.0 | 1.4 | 2.0 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=6A | - | 32 | 36 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=4A | - | 34 | 48 | m |
| Forward Transconductance | gFS | VDS=5V,ID=6A | 20 | - | - | S |
| Input Capacitance | Clss | VDS=25V,VGS=0V, F=1.0MHz | - | 1920 | - | PF |
| Output Capacitance | Coss | VDS=25V,VGS=0V, F=1.0MHz | - | 155 | - | PF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, F=1.0MHz | - | 116 | - | PF |
| Turn-on Delay Time | td(on) | VDS=30V, RL=4.7, VGS=10V,RGEN=3 | - | 8 | - | nS |
| Turn-on Rise Time | tr | VDS=30V, RL=4.7, VGS=10V,RGEN=3 | - | 5 | - | nS |
| Turn-Off Delay Time | td(off) | VDS=30V, RL=4.7, VGS=10V,RGEN=3 | - | 29 | - | nS |
| Turn-Off Fall Time | tf | VDS=30V, RL=4.7, VGS=10V,RGEN=3 | - | 6 | - | nS |
| Total Gate Charge | Qg | VDS=30V,ID=6A, VGS=10V | - | 50 | - | nC |
| Gate-Source Charge | Qgs | VDS=30V,ID=6A, VGS=10V | - | 8 | - | nC |
| Gate-Drain Charge | Qg | VDS=30V,ID=6A, VGS=10V | - | 16 | - | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=6A | - | - | 1.2 | V |
| Diode Forward Current | IS | Surface Mounted on FR4 Board, t 10 sec. | - | - | 7 | A |
| Reverse Recovery Time | trr | TJ = 25C, IF =7A di/dt = 100A/s | - | 35 | - | nS |
| Reverse Recovery Charge | Qrr | TJ = 25C, IF =7A di/dt = 100A/s | - | 43 | - | nC |
2509181711_HXY-MOSFET-IRF7103PBF-HXY_C22366502.pdf
Related Products
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
