60V P channel MOSFET HUASHUO HSP6117 featuring low gate charge and trench technology for switching
Key Attributes
Model Number:
HSP6117
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
14mΩ@4.5V,12A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
241pF@30V
Number:
1 P-Channel
Input Capacitance(Ciss):
4.635nF@30V
Pd - Power Dissipation:
200W
Gate Charge(Qg):
85nC@10V
Mfr. Part #:
HSP6117
Package:
TO-220
Product Description
Product Overview
The HSP6117 is a P-channel, 60V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This RoHS and Green Product compliant MOSFET is 100% EAS guaranteed and features a low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch MOSFET
- Voltage Rating: 60V
- Switching Speed: Fast Switching
- Technology: Trench
- Compliance: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
- Package: TO220
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, -VGS @ -10V1 | -80 | A | |||
| ID@TC=100 | Continuous Drain Current, -VGS @ -10V1 | -45 | A | |||
| IDM | Pulsed Drain Current2 | -170 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 330 | mJ | |||
| IAS | Avalanche Current | 40 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 200 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 0.81 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-18A | --- | 14 | m | |
| VGS=-4.5V , ID=-12A | --- | 17 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | --- | -2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | 4.28 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=-48V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=-10V , ID=-18A | --- | 43 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 2.6 | --- | |
| Qg | Total Gate Charge | VDS=-30V , VGS=-10V , ID=-12A | --- | 85 | --- | nC |
| Qgs | Gate-Source Charge | --- | 11 | --- | ||
| Qgd | Gate-Drain Charge | --- | 30 | --- | ||
| td(on) | Turn-On Delay Time | VDD=-30V , VGS=-10V , RG=6, ID=-1A | --- | 18 | --- | ns |
| tr | Rise Time | --- | 12 | --- | ||
| td(off) | Turn-Off Delay Time | --- | 100 | --- | ||
| tf | Fall Time | --- | 68 | --- | ||
| Ciss | Input Capacitance | VDS=-30V , VGS=0V , f=1MHz | --- | 4635 | --- | pF |
| Coss | Output Capacitance | --- | 524 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 241 | --- | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | -40 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1.2 | V |
2410121630_HUASHUO-HSP6117_C5341704.pdf
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