Fast switching trench technology MOSFET HUASHUO HSM4407 30V P channel for power management solutions
Key Attributes
Model Number:
HSM4407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
11.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
237pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
2.215nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
20nC@4.5V
Mfr. Part #:
HSM4407
Package:
SOP-8
Product Description
Product Overview
The HSM4407 is a P-channel, 30V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch MOSFETs
- Technology: Trench
- Certifications: RoHS, Green Product
- EAS Guaranteed: 100%
- Package: SOP-8
- Packaging: Tape&Reel (4000/Tape&Reel)
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSM4407 | Drain-Source Voltage (VDS) | -30 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| Continuous Drain Current (ID@TA=25) | VGS @ -10V | -11.5 | A | |||
| Continuous Drain Current (ID@TA=70) | VGS @ -10V | -9 | A | |||
| Pulsed Drain Current (IDM) | -46 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 125 | mJ | ||||
| Avalanche Current (IAS) | -50 | A | ||||
| Total Power Dissipation (PD@TA=25) | 1.5 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -30 | V | |||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=-10V , ID=-10A | 10 | 15 | m | ||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=-4.5V , ID=-10A | 16 | 25 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | ||
| Drain-Source Leakage Current (IDSS) | VDS=-24V , VGS=0V , TJ=25 | -1 | μA | |||
| HSM4407 | Drain-Source Leakage Current (IDSS) | VDS=-24V , VGS=0V , TJ=55 | -5 | μA | ||
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | ±100 | nA | |||
| Forward Transconductance (gfs) | VDS=-5V , ID=-10A | 24 | S | |||
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | 9 | Ω | |||
| Total Gate Charge (Qg) | VDS=-15V , VGS=-4.5V , ID=-10A | 20 | nC | |||
| Gate-Source Charge (Qgs) | 5.1 | nC | ||||
| Gate-Drain Charge (Qgd) | 7.3 | nC | ||||
| Turn-On Delay Time (Td(on)) | VDD=-15V , VGS=-10V , RG=3.3Ω ID=-1A | 33.8 | ns | |||
| Rise Time (Tr) | 35.8 | ns | ||||
| Turn-Off Delay Time (Td(off)) | 72.8 | ns | ||||
| Fall Time (Tf) | 10.6 | ns | ||||
| Input Capacitance (Ciss) | VDS=-15V , VGS=0V , f=1MHz | 2215 | pF | |||
| Output Capacitance (Coss) | 310 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 237 | pF | ||||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | -11.5 | A | |||
| HSM4407 | Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | -1 | V | ||
| Thermal Resistance Junction-Ambient (RJA) | (t≤10s) | 40 | /W | |||
| HSM4407 | Thermal Resistance Junction-Ambient (RJA) | 75 | /W | |||
| HSM4407 | Thermal Resistance Junction-Case (RJC) | 24 | /W |
2410121516_HUASHUO-HSM4407_C508781.pdf
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