High Cell Density Trench MOSFET HUASHUO HSM3056 with Operation and Low Gate Charge Characteristics
Key Attributes
Model Number:
HSM3056
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.9mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
70pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.476nF@15V
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
14.6nC@4.5V
Mfr. Part #:
HSM3056
Package:
SOP-8
Product Description
Product Overview
The HSM3056 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline, enabled by advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Advanced high cell density Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 20 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 13 | A | |||
| IDM | Pulsed Drain Current2 | 130 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 80 | mJ | |||
| IAS | Avalanche Current | 40 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 3.1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 75 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 24 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.021 | --- | V/ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | 3.2 | 3.9 | m | |
| VGS=4.5V , ID=15A | 4.9 | 6.1 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.7 | 2.2 | V |
| VGS(th) | VGS(th) Temperature Coefficient | -5.73 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=24V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=20A | 75 | --- | S | |
| Rg | Gate Resistance | VDS=10V , VGS=0V , f=1MHz | 0.7 | 1.65 | 2.6 | |
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=20A | 14.6 | --- | nC | |
| Qgs | Gate-Source Charge | 5.8 | --- | |||
| Qgd | Gate-Drain Charge | 3.5 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3 ID=20A | 7.5 | --- | ns | |
| Tr | Rise Time | 20.1 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 21.6 | --- | ns | ||
| Tf | Fall Time | 4.4 | --- | ns | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 1476 | --- | pF | |
| Coss | Output Capacitance | 556 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 70 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 20 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1 | V | |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSM3056 | SOP-8 | 4000/Tape&Reel | ||||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=40A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121517_HUASHUO-HSM3056_C700980.pdf
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