Low Gate Voltage N Channel MOSFET HXY MOSFET AO3422 HXY Suitable for Battery Protection Applications
Key Attributes
Model Number:
AO3422-HXY
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
7pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
8W
Input Capacitance(Ciss):
695pF@15V
Gate Charge(Qg):
5.5nC@10V
Mfr. Part #:
AO3422-HXY
Package:
SOT-23-3L
Product Description
Product Overview
The AO3422 is an N-Channel Enhancement Mode MOSFET designed to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. Its advanced trench technology makes it suitable for battery protection and other switching applications, offering high power and current handling capability.
Product Attributes
- Brand: HUAXUANYANG HXY
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: SOT-23-3L
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 60 | V | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=25 | 1 | uA | ||
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | 100 | nA | ||
| Forward Transconductance (gfs) | VDS=5V , ID=5A | 7 | S | ||
| Total Gate Charge (Qg) | VDS=12V , VGS=10V , ID=5A | 5.5 | nC | ||
| Gate-Source Charge (Qgs) | 1.8 | ||||
| Gate-Drain Charge (Qgd) | 2.4 | ||||
| Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | 695 | pF | ||
| Output Capacitance (Coss) | 148 | ||||
| Reverse Transfer Capacitance (Crss) | 7 | ||||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | 1.5 | A | ||
| Pulsed Source Current (ISM) | 50 | A | |||
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=5A | 73 | 85 | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=5A | 82 | 93 | ||
| Drain-Source Voltage (VDS) | Absolute Maximum Ratings | 60 | V | ||
| Gate-Source Voltage (VGS) | Absolute Maximum Ratings | 20 | V | ||
| Continuous Drain Current (ID) | Absolute Maximum Ratings | 4.5 | A | ||
| Pulsed Drain Current (IDM) | Absolute Maximum Ratings (Note 1) | 15 | A | ||
| Maximum Power Dissipation (PD) | Absolute Maximum Ratings | 8 | W | ||
| Operating Junction and Storage Temperature Range (TJ, TSTG) | Absolute Maximum Ratings | -55 | 150 | C | |
| Thermal Resistance, Junction-to-Ambient (RJA) | Absolute Maximum Ratings (Note 2) | 89 | C/W |
2511171526_HXY-MOSFET-AO3422-HXY_C4748727.pdf
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