Power Switching MOSFET HUAYI HYG065N15NS1B N Channel Device with 6.2 Milliohm On Resistance Typical
Key Attributes
Model Number:
HYG065N15NS1B
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
165A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
88pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
6.646nF
Pd - Power Dissipation:
375W
Gate Charge(Qg):
96nC@10V
Mfr. Part #:
HYG065N15NS1B
Package:
TO-263-2L
Product Description
N-Channel Enhancement Mode MOSFET
The HYG065N15NS1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a robust and reliable solution with key features including 150V/165A rating, low on-resistance of 6.2m (typ.) at VGS = 10V, and 100% avalanche tested. This device is available in lead-free and green (RoHS compliant) versions, making it suitable for environmentally conscious designs. Its rugged construction ensures reliability in demanding applications such as Uninterruptible Power Supplies (UPS).
Product Attributes
- Brand: HYG (Huayi Microelectronics)
- Origin: China
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, Halogen Free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight)
Technical Specifications
| Parameter | Test Conditions | HYG065N15NS1 | Unit | Min | Typ. | Max |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage (VDSS) | Tc=25C Unless Otherwise Noted | 150 | V | - | - | - |
| Gate-Source Voltage (VGSS) | 20 | V | - | - | - | |
| Maximum Junction Temperature (TJ) | 175 | C | - | - | - | |
| Storage Temperature Range (TSTG) | -55 to 175 | C | - | - | - | |
| Source Current-Continuous (IS) | Body Diode, Tc=25C, Mounted on Large Heat Sink | 165 | A | - | - | - |
| Pulsed Drain Current (IDM) | Tc=25C | 580 | A | - | - | - |
| Continuous Drain Current (ID) | Tc=25C | 165 | A | - | - | - |
| Continuous Drain Current (ID) | Tc=100C | 116 | A | - | - | - |
| Maximum Power Dissipation (PD) | Tc=25C | 375 | W | - | - | - |
| Maximum Power Dissipation (PD) | Tc=100C | 187.5 | W | - | - | - |
| Thermal Resistance, Junction-to-Case (RJC) | 0.40 | C/W | - | - | - | |
| Thermal Resistance, Junction-to-Ambient (RJA) | Surface mounted on FR-4 board | 62 | C/W | - | - | - |
| Single Pulsed-Avalanche Energy (EAS) | L=0.3mH | 1134 | mJ | - | - | - |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250A | 150 | V | - | - | - |
| Drain-to-Source Leakage Current (IDSS) | VDS=150V,VGS=0V | - | A | - | - | 1.0 |
| Drain-to-Source Leakage Current (IDSS) | TJ=125C | - | A | - | - | 50 |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | - | V | 2 | 3.2 | 4 |
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | - | nA | - | - | 100 |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=100A | - | m | - | 6.2 | 7.5 |
| Diode Forward Voltage (VSD) | ISD=100A,VGS=0V | - | V | - | 0.93 | 1.3 |
| Reverse Recovery Time (trr) | ISD=100A,dISD/dt=100A/s | - | ns | - | 141.7 | - |
| Reverse Recovery Charge (Qrr) | - | nC | - | 601.3 | - | |
| Dynamic Characteristics | ||||||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1 MHz | - | - | 2.6 | - | |
| Input Capacitance (Ciss) | VGS=0V, VDS=75V, Frequency=1.0MHz | - | pF | - | 6646 | - |
| Output Capacitance (Coss) | - | pF | - | 888 | - | |
| Reverse Transfer Capacitance (Crss) | - | pF | - | 88 | - | |
| Turn-on Delay Time (td(ON)) | VDD=75V,RG=4, IDS=100A,VGS=10V | - | ns | - | 27.2 | - |
| Turn-on Rise Time (Tr) | - | ns | - | 116.6 | - | |
| Turn-off Delay Time (td(OFF)) | - | ns | - | 55.4 | - | |
| Turn-off Fall Time (Tf) | - | ns | - | 108.6 | - | |
| Gate Charge Characteristics | ||||||
| Total Gate Charge (Qg) | VDS=75V, VGS=10V ID=100A | - | nC | - | 96 | - |
| Gate-Source Charge (Qgs) | - | nC | - | 39 | - | |
| Gate-Drain Charge (Qgd) | - | nC | - | 24 | - | |
2409302203_HUAYI-HYG065N15NS1B_C2827243.pdf
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