Low Gate Charge N Channel MOSFET HUASHUO HSM0056 Suitable for High Speed Circuits and Portable Devices
Key Attributes
Model Number:
HSM0056
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
9.5A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
20mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
2.2V
Reverse Transfer Capacitance (Crss@Vds):
8pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
849pF@50V
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
17.9nC@10V
Mfr. Part #:
HSM0056
Package:
SOP-8
Product Description
Product Overview
The HSM0056 is a high-performance N-Channel MOSFET designed for fast switching applications. It features 100V drain-source voltage and low on-resistance, making it suitable for portable equipment, battery-powered systems, and hard switching or high-speed circuits. Key advantages include 100% EAS guaranteed, low gate charge, and compliance with RoHS and Halogen-Free standards.
Product Attributes
- Brand: HS-Semi
- Product Series: HSM0056
- Channel Type: N-Channel
- Switching Speed: Fast Switching
- Compliance: RoHS and Halogen-Free
- EAS: 100% Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current | (1,6) | 9.5 | A | ||
| ID@TA=100 | Continuous Drain Current | (1,6) | 7.5 | A | ||
| IDM | Pulsed Drain Current | (2) | 37 | A | ||
| EAS | Single Pulse Avalanche Energy | (3) | 45 | mJ | ||
| IAS | Avalanche Current | 30 | A | |||
| PD@TA=25 | Total Power Dissipation | (4) | 3.1 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient | (1) | 40 | /W | ||
| RJA | Thermal Resistance Junction-Ambient | (1) (t10s) | 85 | /W | ||
| RJC | Thermal Resistance Junction-Case | (1) | 24 | /W | ||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=8A (2) | --- | 16 | 20 | m |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=6A (2) | --- | 22 | 30 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.8 | 2.2 | V |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=55 | --- | --- | 5 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Rg | Gate Resistance | VDS=0V , VGS=0V,f=1MHz | --- | 1.1 | --- | |
| Qg | Total Gate Charge | VDS=50V , VGS=10V , ID=10A (10V) | --- | 17.9 | --- | nC |
| Qgs | Gate-Source Charge | --- | 2.8 | --- | ||
| Qgd | Gate-Drain Charge | --- | 5.2 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=6, ID=1A | --- | 13 | --- | ns |
| Tr | Rise Time | --- | 6 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 30 | --- | ||
| Tf | Fall Time | --- | 29 | --- | ||
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | --- | 849 | --- | pF |
| Coss | Output Capacitance | --- | 185 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 8 | --- | ||
| IS | Continuous Source Current | VG=VD=0V , Force Current (1,5,6) | --- | --- | 9.5 | A |
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 (2) | --- | --- | 1.2 | V |
Applications
- Portable Equipment
- Battery Powered Systems
- Hard Switching and High-Speed Circuit
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSM0056 | SOP-8 | 2500/Tape&Reel |
2410121656_HUASHUO-HSM0056_C7543685.pdf
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