Single N Channel Enhancement Mode MOSFET HUAYI HYG015N03LS1C2 with Low RDS ON and Rugged Construction
Key Attributes
Model Number:
HYG015N03LS1C2
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.5mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
44pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.164nF
Pd - Power Dissipation:
62.5W
Output Capacitance(Coss):
511pF
Gate Charge(Qg):
33.4nC@10V
Mfr. Part #:
HYG015N03LS1C2
Package:
PDFN5x6-8L
Product Description
Product Overview
The HYG015N03LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for various power management applications. It features a low on-state resistance (RDS(ON)) of 1.4m (typ.) at VGS = 10V and 2.2m (typ.) at VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. Halogen-free and RoHS compliant versions are available. Ideal for battery protection, switching applications, and DC/DC power management.
Product Attributes
- Brand: Hymexa
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free
- Package Type: PDFN5*6-8L
Technical Specifications
| Parameter | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | V | 30 | |||
| Gate-Source Voltage (VGSS) | V | ±20 | |||
| Maximum Junction Temperature (TJ) | °C | -55 | 175 | ||
| Storage Temperature Range (TSTG) | °C | -55 | 175 | ||
| Source Current-Continuous (IS) | Tc=25°C, Mounted on Large Heat Sink | A | 130 | ||
| Pulsed Drain Current (IDM) | Tc=25°C | A | 470 | ||
| Continuous Drain Current (ID) | Tc=25°C | A | 130 | ||
| Continuous Drain Current (ID) | Tc=100°C | A | 92 | ||
| Maximum Power Dissipation (PD) | Tc=25°C | W | 62.5 | ||
| Maximum Power Dissipation (PD) | Tc=100°C | W | 31.2 | ||
| Thermal Resistance, Junction-to-Case (RJC) | °C/W | 2.4 | |||
| Thermal Resistance, Junction-to-Ambient (RJA) | Surface mounted on FR-4 board | °C/W | 50 | ||
| Single Pulsed Avalanche Energy (EAS) | L=0.3mH | mJ | 261 | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250µA | V | 30 | ||
| Drain-to-Source Leakage Current (IDSS) | VDS=30V,VGS=0V | µA | 1 | ||
| Drain-to-Source Leakage Current (IDSS) | TJ=100°C | µA | 50 | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250µA | V | 1.0 | 1.6 | 3.0 |
| Gate-Source Leakage Current (IGSS) | VGS=±20V,VDS=0V | nA | 100 | ||
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=20A | mΩ | 1.4 | 2 | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V,IDS=20A | mΩ | 2.2 | 3.5 | |
| Diode Forward Voltage (VSD) | ISD=20A,VGS=0V | V | 0.77 | 1.3 | |
| Reverse Recovery Time (trr) | ISD=20A,dISD/dt=100A/µs | ns | 20.4 | ||
| Reverse Recovery Charge (Qrr) | nC | 10.3 | |||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | Ω | 1.2 | ||
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | 2164 | ||
| Output Capacitance (Coss) | pF | 511 | |||
| Reverse Transfer Capacitance (Crss) | pF | 44 | |||
| Turn-on Delay Time (td(ON)) | VDD=15V,RG=2.5Ω, IDS=20A,VGS=10V | ns | 10.7 | ||
| Turn-on Rise Time (Tr) | ns | 45.1 | |||
| Turn-off Delay Time (td(OFF)) | ns | 26.9 | |||
| Turn-off Fall Time (Tf) | ns | 5.5 | |||
| Total Gate Charge (Qg(10V)) | VDS =24V, VGS=10V, ID=20A | nC | 33.4 | ||
| Total Gate Charge (Qg(4.5V)) | nC | 15.2 | |||
| Gate-Source Charge (Qgs) | nC | 8.9 | |||
| Gate-Drain Charge (Qgd) | nC | 4.1 | |||
2410121306_HUAYI-HYG015N03LS1C2_C18222234.pdf
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