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quality P Channel MOSFET HUASHUO HSU25P15 with 150V Drain Source Voltage and Superior CdV dt Effect Decline factory
quality P Channel MOSFET HUASHUO HSU25P15 with 150V Drain Source Voltage and Superior CdV dt Effect Decline factory

P Channel MOSFET HUASHUO HSU25P15 with 150V Drain Source Voltage and Superior CdV dt Effect Decline

Key Attributes
Model Number: HSU25P15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
23A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
186pF
Number:
1 P-Channel
Output Capacitance(Coss):
455pF
Pd - Power Dissipation:
100W
Input Capacitance(Ciss):
3.6nF
Gate Charge(Qg):
56nC@10V
Mfr. Part #:
HSU25P15
Package:
TO-252
Product Description

Product Overview

The HSU25P15 is a P-Channel Fast Switching MOSFET featuring 150V drain-source voltage and advanced trench MOSFET technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This device meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved. Key advantages include a super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HSU (implied by model number)
  • Channel Type: P-Channel
  • Technology: Advanced trench MOSFET
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS guaranteed, full function reliability approved

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage -150 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ -10V -23 A
ID@TC=100 Continuous Drain Current, VGS @ -10V -15 A
IDM Pulsed Drain Current (2) -85 A
EAS Single Pulse Avalanche Energy (3) 220 mJ
IAS Avalanche Current (3) 24 A
PD@TC=25 Total Power Dissipation (4) 100 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient --- 62 /W
RJC Thermal Resistance Junction-Case (1) --- 1.25 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -150 --- --- V
RDS(ON),max Static Drain-Source On-Resistance (2) VGS=-10V , ID=-20A 130 150 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -2.0 -2.8 -4.0 V
IDSS Drain-Source Leakage Current VDS=-120V , VGS=0V , TJ=25 --- -1 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- 100 nA
gfs Forward Transconductance VDS=-10V , ID=-20A 13 --- S
Qg Total Gate Charge VDS=-75V , VGS=-10V , ID=-10A 56 --- nC
Qgs Gate-Source Charge 11 ---
Qgd Gate-Drain Charge 8.5 ---
Td(on) Turn-On Delay Time VDD=-75V , VGS=-10V , RG=6, ID=-10A 33 --- ns
Tr Rise Time 19 ---
Td(off) Turn-Off Delay Time 149 ---
Tf Fall Time 50 ---
Ciss Input Capacitance VDS=-75V , VGS=0V , f=1MHz 3600 --- pF
Coss Output Capacitance 455 ---
Crss Reverse Transfer Capacitance 186 ---
Diode Characteristics
IS Continuous Source Current (1,5) VG=VD=0V , Force Current --- -23 A
VSD Diode Forward Voltage (2) VGS=0V , IS=-1A , TJ=25 --- -1.3 V

Notes:
1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The EAS data shows Max. rating. The test condition is VDD=-75V, VGS=-10V, L=0.5mH, IAS=-24A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.


2410122016_HUASHUO-HSU25P15_C22359257.pdf

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