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quality 100 Volt 380 Amp N Channel MOSFET HUAYI HYG015N10NS1TA Low RDS ON 1.2 Milliohm Halogen Free Power Device factory
quality 100 Volt 380 Amp N Channel MOSFET HUAYI HYG015N10NS1TA Low RDS ON 1.2 Milliohm Halogen Free Power Device factory

100 Volt 380 Amp N Channel MOSFET HUAYI HYG015N10NS1TA Low RDS ON 1.2 Milliohm Halogen Free Power Device

Key Attributes
Model Number: HYG015N10NS1TA
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
380A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
250pF
Number:
1 N-channel
Input Capacitance(Ciss):
12.3nF
Pd - Power Dissipation:
214.3W
Gate Charge(Qg):
205nC@10V
Mfr. Part #:
HYG015N10NS1TA
Package:
TOLL-8L
Product Description

Product Overview

The HYG015N10NS1TA is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with a 100V/380A rating and a low RDS(ON) of 1.2 m(typ.)@VGS = 10V. This device is 100% Avalanche Tested, reliable, and rugged, with halogen-free options available (RoHS Compliant).

Product Attributes

  • Brand: HUAYI
  • Origin: China
  • Material: Halogen-Free (RoHS Compliant)
  • Certifications: RoHS Compliant

Technical Specifications

ParameterSymbolTest ConditionsMinTyp.MaxUnit
Absolute Maximum Ratings
Drain-Source VoltageVDSSTc=25C Unless Otherwise Noted--100V
Gate-Source VoltageVGSSTc=25C Unless Otherwise Noted--±20V
Junction Temperature RangeTJTc=25C Unless Otherwise Noted-55-175°C
Storage Temperature RangeTSTGTc=25C Unless Otherwise Noted-55-175°C
Source Current-Continuous(Body Diode)ISTc=25°C, Mounted on Large Heat Sink--380A
Pulsed Drain CurrentIDMTc=25°C, Pulse width limited by max.junction temperature--1200A
Continuous Drain CurrentIDTc=25°C--380A
Continuous Drain CurrentIDTc=100°C--268.7A
Maximum Power DissipationPDTc=25°C--428.5W
Maximum Power DissipationPDTc=100°C--214.3W
Thermal Resistance, Junction-to-CaseRθJC--0.35°C/W
Thermal Resistance, Junction-to-AmbientRθJASurface mounted on 1in² FR-4 board.-45-°C/W
Single Pulsed-Avalanche EnergyEASL=0.3mH, Limited by TJmax, starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V-718-mJ
Electrical Characteristics (Tc =25°C Unless Otherwise Noted)
Drain-Source Breakdown VoltageBVDSSVGS=0V,IDS= 250μA100--V
Drain-to-Source Leakage CurrentIDSSVDS=100V,VGS=0V--1μA
Drain-to-Source Leakage CurrentIDSSTJ=125°C, VDS=100V,VGS=0V--50μA
Gate Threshold VoltageVGS(th)VDS=VGS, IDS= 250μA234V
Gate-Source Leakage CurrentIGSSVGS=±20V,VDS=0V--±100nA
Drain-Source On-State ResistanceRDS(ON)VGS= 10V,IDS=100A-1.21.5mΩ
Diode Characteristics
Diode Forward VoltageVSDISD=100A,VGS=0V-0.831.2V
Reverse Recovery TimetrrISD=100A,dISD/dt=100A/μs-97-ns
Reverse Recovery ChargeQrrISD=100A,dISD/dt=100A/μs-195-nC
Dynamic Characteristics (Tc =25°C Unless Otherwise Noted)
Gate ResistanceRGVGS=0V,VDS=0V,F=1MHz-1.3-Ω
Input CapacitanceCissVGS=0V, VDS= 25V, Frequency=1.0MHz-12300-pF
Output CapacitanceCossVGS=0V, VDS= 25V, Frequency=1.0MHz-5120-pF
Reverse Transfer CapacitanceCrssVGS=0V, VDS= 25V, Frequency=1.0MHz-250-pF
Turn-on Delay Timetd(ON)VDD= 50V,RG=4.0Ω, IDS= 100A,VGS= 10V-40-ns
Turn-on Rise TimeTrVDD= 50V,RG=4.0Ω, IDS= 100A,VGS= 10V-110-ns
Turn-off Delay Timetd(OFF)VDD= 50V,RG=4.0Ω, IDS= 100A,VGS= 10V-110-ns
Turn-off Fall TimeTfVDD= 50V,RG=4.0Ω, IDS= 100A,VGS= 10V-135-ns
Gate Charge Characteristics
Total Gate ChargeQgVDS =80V, VGS=10V,IDs=100A-205-nC
Gate-Source ChargeQgsVDS =80V, VGS=10V,IDs=100A-60-nC
Gate-Drain ChargeQgdVDS =80V, VGS=10V,IDs=100A-50-nC

2409271603_HUAYI-HYG015N10NS1TA_C2979263.pdf

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