Low On Resistance N Channel MOSFET HUAYI HY4903B6 Ideal for Switch Applications and Electric Power Steering
Key Attributes
Model Number:
HY4903B6
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
314A
Operating Temperature -:
-
RDS(on):
2.5mΩ@4.5V,150A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
826pF
Number:
1 N-channel
Input Capacitance(Ciss):
9.417nF
Output Capacitance(Coss):
1.226nF
Pd - Power Dissipation:
268W
Gate Charge(Qg):
-
Mfr. Part #:
HY4903B6
Package:
TO-263-6
Product Description
Product Overview
The HY4903B6 is a N-Channel Enhancement Mode MOSFET from HOOYI, designed for switch applications, brushless motor drive, DC-DC conversion, and electric power steering. It features low on-resistance (RDS(ON)) at typical values of 1.3m (VGS=10V) and 1.7m (VGS=4.5V), 100% avalanche tested, and a reliable, rugged design. Lead-free and green devices are available, complying with RoHS standards.
Product Attributes
- Brand: HOOYI
- Model: HY4903B6
- Material: Lead Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020
Technical Specifications
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250A | 30 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=30V,VGS=0V | - | - | 1 | A |
| Drain-to-Source Leakage Current (IDSS) | TJ=55C | - | - | 5 | A |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 1 | 2 | 3 | V |
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=150A | - | 1.3 | 1.7 | m |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V,IDS=150A | - | 1.7 | 2.5 | m |
| Diode Forward Voltage (VSD) | ISD=150A,VGS=0V | - | 0.8 | 1.2 | V |
| Reverse Recovery Time (trr) | ISD=150A,dISD/dt=100A/s | - | 38 | - | ns |
| Reverse Recovery Charge (Qrr) | - | - | 80 | - | nC |
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1 MHz | - | 2.1 | - | |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 9417 | - | pF |
| Output Capacitance (Coss) | - | - | 1226 | - | pF |
| Reverse Transfer Capacitance (Crss) | - | - | 826 | - | pF |
| Turn-on Delay Time (td(ON)) | VDD=20V,RG=4, IDS=150A,VGS=10V | - | 52 | - | ns |
| Turn-on Rise Time (Tr) | - | - | 120 | - | ns |
| Turn-off Delay Time (td(OFF)) | - | - | 90 | - | ns |
| Turn-off Fall Time (Tf) | - | - | 78 | - | ns |
| Total Gate Charge (Qg) | VDS =24V, VGS=10V, ID=150A | - | 269 | - | nC |
| Gate-Source Charge (Qgs) | - | - | 28 | - | nC |
| Gate-Drain Charge (Qgd) | - | - | 66 | - | nC |
| Drain-Source Voltage (VDSS) | - | - | - | 30 | V |
| Gate-Source Voltage (VGSS) | - | - | - | 20 | V |
| Maximum Junction Temperature (TJ) | - | - | - | 175 | C |
| Storage Temperature Range (TSTG) | - | -55 | - | 175 | C |
| Source Current-Continuous (IS) | Tc=25C, Mounted on Large Heat Sink | - | - | 314 | A |
| Pulsed Drain Current (IDM) | Tc=25C | - | - | 1116 | A |
| Continuous Drain Current (ID) | Tc=25C | - | - | 314 | A |
| Continuous Drain Current (ID) | Tc=100C | - | - | 222 | A |
| Maximum Power Dissipation (PD) | Tc=25C | - | - | 268 | W |
| Maximum Power Dissipation (PD) | Tc=100C | - | - | 134 | W |
| Thermal Resistance, Junction-to-Case (RJC) | - | - | 0.56 | - | C/W |
| Thermal Resistance, Junction-to-Ambient (RJA) | Surface mounted on 1in FR-4 board | - | 40 | - | C/W |
| Single Pulsed-Avalanche Energy (EAS) | L=0.5mH, Limited by TJmax, starting TJ=25C, RG=25, VGS=10V | - | 1190 | - | mJ |
2410121313_HUAYI-HY4903B6_C133393.pdf
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