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quality Power Switching MOSFET Dual N Channel HYG170ND03LA1S 30 Volt 9 Amp with Avalanche Tested Reliability factory
quality Power Switching MOSFET Dual N Channel HYG170ND03LA1S 30 Volt 9 Amp with Avalanche Tested Reliability factory

Power Switching MOSFET Dual N Channel HYG170ND03LA1S 30 Volt 9 Amp with Avalanche Tested Reliability

Key Attributes
Model Number: HYG170ND03LA1S
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9A
RDS(on):
19.7mΩ@4.5V,4A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
36pF
Number:
2 N-Channel
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
354pF
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
HYG170ND03LA1S
Package:
SOP-8
Product Description

Product Overview

The HYG170ND03LA1S is a Dual N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a 30V/9A rating with low on-state resistance (RDS(ON)) of 14.5 m (typ.) at VGS = 10V and 19.7 m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions.

Product Attributes

  • Brand: HYG (HUAYI)
  • Origin: China
  • Material: Halogen Free and Green Devices Available (RoHS Compliant)
  • Certifications: RoHS Compliant, meets IPC/JEDEC J-STD-020 for MSL classification

Technical Specifications

Parameter Condition Min Typ. Max Unit
Absolute Maximum Ratings
Drain-Source Voltage (VDSS) (Tc=25C Unless Otherwise Noted) - - 30 V
Gate-Source Voltage (VGSS) (Tc=25C Unless Otherwise Noted) - - 20 V
Junction Temperature Range (TJ) -55 - 150 C
Storage Temperature Range (TSTG) -55 - 150 C
Source Current-Continuous (IS) (Body Diode) Tc=25C - - 9 A
Pulsed Drain Current (IDM) Tc=25C - - 36 A
Continuous Drain Current (ID) Tc=25C - - 9 A
Continuous Drain Current (ID) Tc=70C - - 7.2 A
Maximum Power Dissipation (PD) Tc=25C - - 2.5 W
Maximum Power Dissipation (PD) Tc=70C - - 1.6 W
Thermal Resistance, Junction-to-Case (RJC) - - 50 C/W
Thermal Resistance, Junction-to-Ambient (RJA) - - 80 C/W
Single Pulsed-Avalanche Energy (EAS) L=0.1mH - 10 - mJ
Electrical Characteristics
Drain-Source Breakdown Voltage (BVDSS) VGS=0V, IDS=250A 30 - - V
Drain-to-Source Leakage Current (IDSS) VDS=30V,VGS=0V - - 1 A
Drain-to-Source Leakage Current (IDSS) TJ=125C - - 50 A
Gate Threshold Voltage (VGS(th)) VDS=VGS, IDS=250A 1 1.6 3 V
Gate-Source Leakage Current (IGSS) VGS=20V,VDS=0V - - 100 nA
Drain-Source On-State Resistance (RDS(ON)) VGS=10V,IDS=6A - 14.5 18 m
Drain-Source On-State Resistance (RDS(ON)) VGS=4.5V,IDS=4A - 19.7 24.6 m
Diode Forward Voltage (VSD) ISD=1A,VGS=0V - 0.7 1.0 V
Reverse Recovery Time (trr) ISD=6A,dISD/dt=100A/s - 8 - ns
Reverse Recovery Charge (Qrr) - 19 - nC
Input Capacitance (Ciss) VGS=0V, VDS=25V, Frequency=1.0MHz - 354 - pF
Output Capacitance (Coss) VGS=0V, VDS=25V, Frequency=1.0MHz - 59 - pF
Reverse Transfer Capacitance (Crss) VGS=0V, VDS=25V, Frequency=1.0MHz - 36 - pF
Turn-on Delay Time (td(ON)) VDD=10V,RG=4, IDS=6A,VGS=10V - 3.9 - ns
Turn-on Rise Time (Tr) VDD=10V,RG=4, IDS=6A,VGS=10V - 7.5 - ns
Turn-off Delay Time (td(OFF)) VDD=10V,RG=4, IDS=6A,VGS=10V - 15.6 - ns
Turn-off Fall Time (Tf) VDD=10V,RG=4, IDS=6A,VGS=10V - 4.6 - ns
Total Gate Charge (Qg) VDS =24V, VGS=10V, ID=6A - 9 - nC
Gate-Source Charge (Qgs) VDS =24V, VGS=10V, ID=6A - 1.2 - nC
Gate-Drain Charge (Qgd) VDS =24V, VGS=10V, ID=6A - 2.3 - nC

2410121314_HUAYI-HYG170ND03LA1S_C5179487.pdf

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