Low On Resistance N Channel MOSFET HUAYI HY5012W 125V 300A for Power Management in Inverter Systems
Key Attributes
Model Number:
HY5012W
Product Custom Attributes
Drain To Source Voltage:
125V
Current - Continuous Drain(Id):
300A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
930pF
Number:
1 N-channel
Output Capacitance(Coss):
1.57nF
Input Capacitance(Ciss):
16.3nF
Pd - Power Dissipation:
500W
Gate Charge(Qg):
352nC@10V
Mfr. Part #:
HY5012W
Package:
TO-247A-3L
Product Description
Product Overview
The HY5012W/A is a 125V/300A N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers advantages such as low on-state resistance (RDS(ON)=2.9 m typ. @ VGS=10V), avalanche rating, and a reliable, rugged design. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HY(Huayi)
- Origin: China
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
Technical Specifications
| Part Number | Package Type | Drain-Source Voltage (VDS) | Continuous Drain Current (ID) @ TC=25C | Continuous Drain Current (ID) @ TC=100C | RDS(ON) @ VGS=10V (m) | Gate-Source Voltage (VGS) | Maximum Junction Temperature (TJ) |
| HY5012W/A | TO-247A-3L | 125 V | 300 A | 196 A | 2.9 (typ.) | 25 V | 175 C |
| HY5012W/A | TO-3P-3L | 125 V | 300 A | 196 A | 2.9 (typ.) | 25 V | 175 C |
2410121930_HUAYI-HY5012W_C2894733.pdf
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