Single N Channel Enhancement Mode MOSFET HUAYI HYG024N03LR1D with TO 252 2L Package and Low On Resistance
Key Attributes
Model Number:
HYG024N03LR1D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
RDS(on):
3.6mΩ@4.5V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
441pF
Number:
1 N-channel
Output Capacitance(Coss):
567pF
Pd - Power Dissipation:
57W
Input Capacitance(Ciss):
3.918nF
Gate Charge(Qg):
86.8nC@10V
Mfr. Part #:
HYG024N03LR1D
Package:
TO-252-2L
Product Description
Product Overview
The HYG024N03LR1D is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested, and a reliable, rugged construction. Halogen-free options are available. This MOSFET is suitable for battery protection and DC-DC converters.
Product Attributes
- Brand: HUAYI
- Product Code: HYG024N03LR1D
- Material Compliance: RoHS compliant, Halogen-free
- Package Type: TO-252-2L
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25 Unless Otherwise Noted | - | - | 30 | V |
| Gate-Source Voltage | VGSS | Tc=25 Unless Otherwise Noted | - | - | ±20 | V |
| Junction Temperature Range | TJ | Tc=25 Unless Otherwise Noted | -55 | - | 175 | |
| Storage Temperature Range | TSTG | Tc=25 Unless Otherwise Noted | -55 | - | 175 | |
| Source Current-Continuous (Body Diode) | IS | Tc=25 Mounted on Large Heat Sink | - | - | 100 | A |
| Pulsed Drain Current | IDM | Tc=25 | - | - | 378 | A |
| Continuous Drain Current | ID | Tc=25 | - | - | 100 | A |
| Continuous Drain Current | ID | Tc=100 | - | - | 70 | A |
| Maximum Power Dissipation | PD | Tc=25 | - | - | 57 | W |
| Maximum Power Dissipation | PD | Tc=100 | - | - | 28 | W |
| Thermal Resistance, Junction-to-Case | RJC | - | - | 2.6 | - | /W |
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on FR-4 board. | - | 110 | - | /W |
| Single Pulsed Avalanche Energy | EAS | L=0.3mH | - | 338.8 | - | mJ |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250µA | 30 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=30V,VGS=0V | - | - | 1 | µA |
| Drain-to-Source Leakage Current | IDSS | TJ=125, VDS=30V,VGS=0V | - | - | 50 | µA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250µA | 1 | 1.4 | 3 | V |
| Gate-Source Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=20A | - | 2.3 | 2.8 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V,IDS=20A | - | 3.0 | 3.6 | mΩ |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD* | ISD=20A,VGS=0V | - | 0.77 | 1.2 | V |
| Reverse Recovery Time | trr | ISD=20A,dISD/dt=100A/µs | - | 23.5 | - | ns |
| Reverse Recovery Charge | Qrr | ISD=20A,dISD/dt=100A/µs | - | 15.5 | - | nC |
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | - | 2.8 | - | Ω |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 3918 | - | pF |
| Output Capacitance | Coss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 567 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 441 | - | pF |
| Turn-on Delay Time | td(ON) | VDD=24V,RG=4Ω, IDS=20A,VGS=10V | - | 10.6 | - | ns |
| Turn-on Rise Time | Tr | VDD=24V,RG=4Ω, IDS=20A,VGS=10V | - | 69.8 | - | ns |
| Turn-off Delay Time | td(OFF) | VDD=24V,RG=4Ω, IDS=20A,VGS=10V | - | 67.2 | - | ns |
| Turn-off Fall Time | Tf | VDD=24V,RG=4Ω, IDS=20A,VGS=10V | - | 90.5 | - | ns |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS =24V, ID=20A, VGS=10V | - | 86.8 | - | nC |
| Total Gate Charge | Qg | VDS =24V, ID=20A, VGS=4.5V | - | 47.7 | - | nC |
| Gate-Source Charge | Qgs | VDS =24V, ID=20A, VGS=10V | - | 12.6 | - | nC |
| Gate-Drain Charge | Qgd | VDS =24V, ID=20A, VGS=10V | - | 21.7 | - | nC |
2410121326_HUAYI-HYG024N03LR1D_C2888332.pdf
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