Single N Channel Enhancement Mode MOSFET HUAYI HYG030N03LQ1C2 with Halogen Free and RoHS Compliance
Key Attributes
Model Number:
HYG030N03LQ1C2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
294pF
Number:
1 N-channel
Pd - Power Dissipation:
62.5W
Input Capacitance(Ciss):
1.886nF
Mfr. Part #:
HYG030N03LQ1C2
Package:
PDFN5x6-8L
Product Description
Product Overview
The HYG030N03LQ1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-resistance (RDS(ON)) of 2.4m typ. at VGS = 10V and 3.5m typ. at VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. Halogen-free and RoHS compliant versions are available. This MOSFET is suitable for battery protection and load switch applications.
Product Attributes
- Brand: HYG (HUAYI)
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free
Technical Specifications
| Symbol | Parameter | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | V | 30 | |||
| VGSS | Gate-Source Voltage | V | ±20 | |||
| TJ | Maximum Junction Temperature | ±C | -55 | 175 | ||
| TSTG | Storage Temperature Range | ±C | -55 | 175 | ||
| ID | Continuous Drain Current | Tc=25±C | A | 100 | ||
| ID | Continuous Drain Current | Tc=100±C | A | 71 | ||
| IDM | Pulsed Drain Current | Tc=25±C | A | 400 | ||
| PD | Maximum Power Dissipation | Tc=25±C | W | 62.5 | ||
| PD | Maximum Power Dissipation | Tc=100±C | W | 31.2 | ||
| RθJC | Thermal Resistance, Junction-to-Case | ±C/W | 2.4 | |||
| RθJA | Thermal Resistance, Junction-to-Ambient | ±C/W | 50 | |||
| EAS | Single Pulsed-Avalanche Energy | L=0.3mH | mJ | 148 | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS=250μA | V | 30 | - | - |
| IDSS | Drain-to-Source Leakage Current | VDS=30V,VGS=0V | μA | 1 | ||
| IDSS | Drain-to-Source Leakage Current | TJ=100±C | μA | 50 | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250μA | V | 1.0 | 1.4 | 3.0 |
| IGSS | Gate-Source Leakage Current | VGS=±20V,VDS=0V | nA | 100 | ||
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V,IDS=20A | mΩ | 2.4 | 3.0 | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V,IDS=20A | mΩ | 3.5 | 4.2 | |
| VSD | Diode Forward Voltage | ISD=20A,VGS=0V | V | 0.8 | 1.3 | |
| trr | Reverse Recovery Time | ISD=20A,dISD/dt=100A/μs | ns | 12.6 | - | |
| Qrr | Reverse Recovery Charge | nC | 5.3 | - | ||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | Ω | 2.6 | - | |
| Ciss | Input Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | 1886 | - | |
| Coss | Output Capacitance | pF | 306 | - | ||
| Crss | Reverse Transfer Capacitance | pF | 294 | - | ||
| td(ON) | Turn-on Delay Time | VDD=15V,RG=2.5Ω, IDS=20A,VGS=10V | ns | 9.4 | - | |
| Tr | Turn-on Rise Time | ns | 53.7 | - | ||
| td(OFF) | Turn-off Delay Time | ns | 40.6 | - | ||
| Tf | Turn-off Fall Time | ns | 58.8 | - | ||
| Qg(10V) | Total Gate Charge | VDS =24V, VGS=10V, ID=20A | nC | 55.3 | - | |
| Qg(4.5V) | Total Gate Charge | nC | 30.7 | - | ||
| Qgs | Gate-Source Charge | nC | 6.6 | - | ||
| Qgd | Gate-Drain Charge | nC | 18.1 | - | ||
2410121257_HUAYI-HYG030N03LQ1C2_C5121294.pdf
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