Lead Free High Current MOSFET HUAYI HY3312B with 125 Volt Voltage Rating and Low On State Resistance
Key Attributes
Model Number:
HY3312B
Product Custom Attributes
Drain To Source Voltage:
125V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+175℃
RDS(on):
9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
432pF
Number:
1 N-channel
Output Capacitance(Coss):
940pF
Input Capacitance(Ciss):
5.896nF
Pd - Power Dissipation:
278W
Gate Charge(Qg):
130nC@10V
Mfr. Part #:
HY3312B
Package:
TO-263-2L
Product Description
Product Overview
The HY3312 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a voltage rating of 125V and a continuous drain current of 130A, featuring a low on-state resistance of 7.7 m (typ.) at VGS=10V. This device is available in Lead-Free and Green (RoHS Compliant) versions, ensuring reliability and environmental responsibility. It is 100% avalanche tested and constructed with lead-free materials.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS Compliant, Lead Free
Technical Specifications
| Model | Package Type | VDSS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | VGS(th) (V) | EAS (mJ) |
| HY3312P/M/B/PS/PM | TO-3PM-3S | 125 | 130 | 7.7 (typ.) | 2.0 - 4.0 | 720*** |
| HY3312P/M/B/PS/PM | TO-3PS-3L | 125 | 130 | 7.7 (typ.) | 2.0 - 4.0 | 720*** |
| HY3312P/M/B/PS/PM | TO-263-2L | 125 | 130 | 7.7 (typ.) | 2.0 - 4.0 | 720*** |
| HY3312P/M/B/PS/PM | TO-220FB-3L | 125 | 130 | 7.7 (typ.) | 2.0 - 4.0 | 720*** |
| HY3312P/M/B/PS/PM | TO-220FB-3S | 125 | 130 | 7.7 (typ.) | 2.0 - 4.0 | 720*** |
2410121715_HUAYI-HY3312B_C357988.pdf
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