High Voltage IGBT HXY MOSFET IRG7PH50K10D-EPBF-HXY for Solar Inverters and Energy Storage Solutions
Key Attributes
Model Number:
IRG7PH50K10D-EPBF-HXY
Product Custom Attributes
Td(off):
195ns
Pd - Power Dissipation:
417W
Td(on):
48ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
35pF
Input Capacitance(Cies):
5.047nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@250uA
Gate Charge(Qg):
170nC@15V
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
161pF
Reverse Recovery Time(trr):
375ns
Switching Energy(Eoff):
1.6mJ
Turn-On Energy (Eon):
2.65mJ
Mfr. Part #:
IRG7PH50K10D-EPBF-HXY
Package:
TO-247
Product Description
Product Overview
The IRG7PH50K10D-EPBF is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key applications include UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters. This device features a maximum junction temperature of 175C and is available in a TO-247 package.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: IRG7PH50K10D-EPBF
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Collector emitter voltage | VCE | 1200 | V | |||
| DC collector current | IC | TC = 25C | 80 | A | ||
| DC collector current | IC | TC = 100C | 40 | A | ||
| Pulsed collector current | ICM | TC = 25C | 160 | A | ||
| Maximum Diode forward current | IF | TC = 25C | 80 | A | ||
| Maximum Diode forward current | IF | TC = 100C | 40 | A | ||
| Diode pulsed current | IFM | TC = 25C | 160 | A | ||
| Gate-Emitter voltage | VGE | TVJ = 25C | 20 | V | ||
| Transient Gate-Emitter Voltage | (tp 10s, D < 0.010) TVJ = 25C | 30 | V | |||
| Power Dissipation | Ptot | TC = 25C | 417 | W | ||
| Power Dissipation | Ptot | TC = 100C | 208 | W | ||
| Operating Junction Temperature Range | TVJ | -40 | +175 | C | ||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance | ||||||
| Thermal resistance: junction - ambient | RJA | 40 | C/W | |||
| Thermal resistance: junction - case IGBT | RJC | IGBT | 0.36 | C/W | ||
| Thermal resistance: junction - case Diode | RJC | Diode | 0.45 | C/W | ||
| Electrical Characteristics | ||||||
| Collector - Emitter Breakdown Voltage | V(BR)CES | VGE = 0V , IC = 0.5mA | 1200 | - | - | V |
| Collector - Emitter Saturation Voltage | VCESAT | VGE = 15V , IC = 40A ,TVJ = 25C | 1.6 | 1.9 | 2.3 | V |
| Collector - Emitter Saturation Voltage | VCESAT | VGE = 15V , IC = 40A ,TVJ = 175C | - | 2.9 | - | V |
| Diode forward voltage | VF | VGE = 0V , IC = 40A ,TVJ = 25C | - | 2.5 | - | V |
| Diode forward voltage | VF | VGE = 0V , IC = 40A ,TVJ = 175C | - | 1.8 | - | V |
| Gate-Emitter threshold voltage | VGE(th) | VGE = VCE, IC = 250mA | 5.1 | 5.8 | 6.5 | V |
| Zero Gate voltage Collector current | ICES | VCE = 650V , VGE = 0V | - | - | 250.0 | mA |
| Gate-Emitter leakage current | IGES | VGE = 20V , VCE = 0V | - | - | 100 | nA |
| Transconductance | gfs | VGE = 20V, IC = 40A | - | 28 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Cies | VGE = 0V, VCE = 25V, f = 1MHz | - | 5047 | - | pF |
| Output Capacitance | Coes | - | 161 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 35 | - | pF | |
| Gate Charge | Qg | VGE = 0 to 15V VCE = 960V, IC = 40A | - | 170 | - | nC |
| Gate to Emitter charge | Qge | - | 37.5 | - | nC | |
| Gate to Collector charge | Qgc | - | 68 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGE = 15V, VCC = 600V IC=40A, RG(off) = 12,RG(off) = 12 | - | 48 | - | ns |
| Turn-On Rise Time | tr | - | 50 | - | ns | |
| Turn-Off Delay Time | td(off) | - | 195 | - | ns | |
| Turn-Off Fall Time | tf | - | 100 | - | ns | |
| Turn-on energy | Eon | - | 2.65 | - | mJ | |
| Turn-off energy | Eoff | - | 1.6 | - | mJ | |
| Total switching energy | Ets | - | 4.25 | - | mJ | |
| Diode Recovery Characteristics | ||||||
| Reverse recovery time | Trr | VR = 600 V, IF = 40 A, di/dt = 600 A/S | - | 375 | - | ns |
| Reverse recovery charge | Qrr | - | 2.29 | - | mC | |
| Peak reverse recovery current | Irrm | - | 15 | - | A | |
2509181737_HXY-MOSFET-IRG7PH50K10D-EPBF-HXY_C49003382.pdf
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