P Channel MOSFET HUAYI HY19P03D Featuring Low RDS ON and Avalanche Tested for Power Management Systems
Key Attributes
Model Number:
HY19P03D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-
RDS(on):
8mΩ@4.5V,45A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
329pF
Number:
1 P-Channel
Output Capacitance(Coss):
461pF
Input Capacitance(Ciss):
4.787nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
90nC@10V
Mfr. Part #:
HY19P03D
Package:
TO-252-2
Product Description
Product Overview
The HY19P03 is a P-Channel Enhancement Mode MOSFET designed for power management applications, particularly in DC/DC converters. It offers a low on-resistance (RDS(ON)) of 4.8m (typ.) at VGS = 10V and 6.5m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available.
Product Attributes
- Brand: HOOYI
- Material: Lead Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, Halogen Free
Technical Specifications
| Model | Feature | RDS(ON) @ VGS=10V (typ.) | RDS(ON) @ VGS=4.5V (typ.) | Drain-Source Voltage (VDS) | Drain Current (ID) @ Tc=25C | Package |
| HY19P03 D | P-Channel Enhancement Mode MOSFET | 4.8 m | 6.5 m | -30 V | -90 A | TO-252-2L |
| HY19P03 U | P-Channel Enhancement Mode MOSFET | 4.8 m | 6.5 m | -30 V | -90 A | TO-251-3L |
| HY19P03 V | P-Channel Enhancement Mode MOSFET | 4.8 m | 6.5 m | -30 V | -90 A | TO-251-3S |
2410121253_HUAYI-HY19P03D_C122492.pdf
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