Power MOSFET HUAYI HY1710P with 70A Continuous Current and 100V Maximum Drain Source Voltage Rating
Key Attributes
Model Number:
HY1710P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+175℃
RDS(on):
18mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
190pF
Number:
1 N-channel
Output Capacitance(Coss):
273pF
Input Capacitance(Ciss):
4.2nF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
94nC@10V
Mfr. Part #:
HY1710P
Package:
TO-220FB
Product Description
Product Overview
The HUAYI HY1710 is a N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It features a high voltage rating of 100V and a continuous drain current of 70A, with a low on-resistance of 15m (typ.) at VGS = 10V. This device is 100% Avalanche Tested, reliable, rugged, and available in lead-free (RoHS compliant) and "Green" (lead-free and halogen-free) versions.
Product Attributes
- Brand: HUAYI
- Certifications: RoHS Compliant, "Green" (lead-free and halogen-free)
- Material: Lead-Free Devices Available (RoHS Compliant)
Technical Specifications
| Parameter | Symbol | Test Conditions | HY1710 | Unit | Min | Typ. | Max |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | VDSS | Drain-Source Voltage | V | 100 | |||
| VGSS | Gate-Source Voltage | V | 25 | ||||
| TJ | Maximum Junction Temperature | C | -55 | 175 | |||
| TSTG | Storage Temperature Range | C | -55 | 175 | |||
| ID | Continuous Drain Current (Tc=25C) | A | 70 | ||||
| ID | Continuous Drain Current (Tc=100C) | A | 49 | ||||
| Electrical Characteristics | BVDSS | Drain-Source Breakdown Voltage (VGS=0V,IDS= 250A) | V | 100 | - | - | |
| IDSS | Drain-to-Source Leakage Current (VDS= 100V,VGS=0V) | A | - | - | 1 | ||
| VGS(th) | Gate Threshold Voltage (VDS=VGS, IDS= 250A) | V | 2 | 3 | 4 | ||
| RDS(ON) | Drain-Source On-State Resistance (VGS= 10V,IDS= 35A) | m | - | 15 | 18 | ||
| Dynamic Characteristics | Ciss | Input Capacitance (VGS=0V, VDS= 25V, Frequency=1.0MHz) | pF | - | 4200 | - | |
| Coss | Output Capacitance | pF | - | 273 | - | ||
| Crss | Reverse Transfer Capacitance | pF | - | 190 | - | ||
| Gate Charge Characteristics | Qg | Total Gate Charge (VDS = 80V, VGS= 10V, IDs= 35A) | nC | - | 94 | - |
2410121242_HUAYI-HY1710P_C358114.pdf
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