P Channel Enhancement Mode MOSFET HUAYI HY12P03C2 for Networking DC DC Power Systems and Power Tools
Key Attributes
Model Number:
HY12P03C2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
399pF
Number:
1 P-Channel
Output Capacitance(Coss):
469pF
Input Capacitance(Ciss):
2.814nF
Pd - Power Dissipation:
42W
Gate Charge(Qg):
34nC
Mfr. Part #:
HY12P03C2
Package:
PPAK5x6-8L
Product Description
Product Overview
The HY12P03C2 is a P-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power systems. It features a low on-state resistance (RDS(ON) of 10.4m typical at VGS = -10V), 100% avalanche tested, and a reliable, rugged design. Halogen-free devices are available.
Product Attributes
- Brand: HUAYI
- Origin: China
- Material: Halogen-Free Devices Available (RoHS compliant)
- Certifications: RoHS compliant, IPC/JEDEC J-STD-020 compliant for MSL classification
Technical Specifications
| Part Number | Type | Drain-Source Voltage (V) | Continuous Drain Current (A) | RDS(ON) @ VGS = -10V (m) | RDS(ON) @ VGS = -4.5V (m) | Pulsed Drain Current (A) | Max Power Dissipation (W) | Junction-to-Case Thermal Resistance (C/W) | Junction-to-Ambient Thermal Resistance (C/W) | Package |
| HY12P03C2 | P-Channel Enhancement Mode MOSFET | -30 | -50 | 10.4 (typ.) | 14.2 (typ.) | -200 | 42 (Tc=25C), 17 (Mounted on Large Heat Sink) | 3 | 45 | PPAK5*6-8L |
2410121740_HUAYI-HY12P03C2_C358006.pdf
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