Power Management N Channel MOSFET HUAYI HY5208W 80V 320A Low On Resistance for Inverter Applications
Key Attributes
Model Number:
HY5208W
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
320A
Operating Temperature -:
-
RDS(on):
2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
920pF
Number:
1 N-channel
Output Capacitance(Coss):
1.5nF
Input Capacitance(Ciss):
12.16nF
Pd - Power Dissipation:
416W
Gate Charge(Qg):
298nC@10V
Mfr. Part #:
HY5208W
Package:
TO-247A-3L
Product Description
Product Overview
The HY5208W/A is a 1.7 N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with features like 80V/320A capability, low on-resistance (RDS(ON)=1.7 m typ. @ VGS=10V), avalanche rating, and a reliable, rugged construction. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HY (Huayi)
- Origin: China
- Certifications: RoHS Compliant, Lead Free, Green Devices
- Package Types: TO-3P-3L, TO-247A-3L
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 80 | V | |||
| VGSS | Gate-Source Voltage | ±25 | V | |||
| TJ | Maximum Junction Temperature | 175 | °C | |||
| TSTG | Storage Temperature Range | -55 | 175 | °C | ||
| IS | Diode Continuous Forward Current | TC=25°C | 320 | A | ||
| IDM | Pulsed Drain Current | TC=25°C | 920*** | A | ||
| ID | Continuous Drain Current | TC=25°C | 320 | A | ||
| ID | Continuous Drain Current | TC=100°C | 228 | A | ||
| PD | Maximum Power Dissipation | TC=25°C | 416 | W | ||
| PD | Maximum Power Dissipation | TC=100°C | 208 | W | ||
| RθJC | Thermal Resistance-Junction to Case | 0.36 | °C/W | |||
| RθJA | Thermal Resistance-Junction to Ambient | 40 | °C/W | |||
| EAS | Avalanche Energy, Single Pulsed | L=0.5mH | 280 | mJ | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250µA | 80 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=80V, VGS=0V | 1 | µA | ||
| IDSS | Zero Gate Voltage Drain Current | TJ=85°C | 10 | µA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250µA | 2 | 3 | 4 | V |
| IGSS | Gate Leakage Current | VGS=±25V, VDS=0V | ±100 | nA | ||
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, IDS=160A | 1.7 | 2.0 | mΩ | |
| VSD | Diode Forward Voltage | ISD=160A, VGS=0V | 0.8 | 1 | V | |
| trr | Reverse Recovery Time | 76 | ns | |||
| Qrr | Reverse Recovery Charge | ISD=160A, dlSD/dt=100A/µs | 140 | nC | ||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 1.7 | Ω | ||
| Ciss | Input Capacitance | 12160 | pF | |||
| Coss | Output Capacitance | 1500 | pF | |||
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | 1050** | pF | ||
| td(ON) | Turn-on Delay Time | VDD=40V, R G=6 Ω, IDS=160A, VGS=10V, | 58 | ns | ||
| Tr | Turn-on Rise Time | 90 | 176 | |||
| td(OFF) | Turn-off Delay Time | 110 | 200 | |||
| Tf | Turn-off Fall Time | 35 | ||||
| Qg | Total Gate Charge | VDS=64V, VGS=10V, IDS=160A | 298 | nC | ||
| Qgs | Gate-Source Charge | 44 | ||||
| Qgd | Gate-Drain Charge | 115 | ||||
2410121739_HUAYI-HY5208W_C330384.pdf
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