N Channel MOSFET HUAYI HYG020N04NR1P Featuring Low RDS ON 1.9 Milliohms and 40V 220A Specifications
Key Attributes
Model Number:
HYG020N04NR1P
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
220A
RDS(on):
1.9mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
707pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.392nF
Output Capacitance(Coss):
806pF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
110nC@10V
Mfr. Part #:
HYG020N04NR1P
Package:
TO-220FB-3L
Product Description
Product Overview
The HYG020N04NR1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications. It offers high performance with a 40V/220A rating and a low RDS(ON) of 1.9 m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available.
Product Attributes
- Brand: HYG
- Origin: China
- Certifications: RoHS Compliant, J-STD-020 (MSL classification)
- Material: Lead-Free and Green Devices Available
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| HYG020N04NR1 | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS= 250A | 40 | - | - | V |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS= 250A | 2 | 2.6 | 4 | V | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS= 10V, IDS= 40A | - | 1.9 | 2.4 | m | |
| Diode Forward Voltage (VSD) | ISD=40A,VGS=0V | - | 0.8 | 1.2 | V | |
| Reverse Recovery Time (trr) | ISD=40A,dISD/dt=100A/s | - | 27 | - | ns | |
| Input Capacitance (Ciss) | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 4392 | - | pF | |
| Output Capacitance (Coss) | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 806 | - | pF | |
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 707 | - | pF | |
| Total Gate Charge (Qg) | VDS = 32V, VGS= 10V, IDs= 40A | - | 110 | - | nC | |
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | - | 2.5 | - | ||
| Common Ratings | Drain-Source Voltage (VDSS) | Tc=25C Unless Otherwise Noted | - | 40 | - | V |
| Gate-Source Voltage (VGSS) | - | - | 25 | - | V | |
| Continuous Drain Current (ID) | Tc=25C | - | 220 | - | A | |
| Pulsed Drain Current (IDM) | Tc=25C | - | 600 | - | A | |
| Maximum Power Dissipation (PD) | Tc=25C | - | 200 | - | W | |
| Junction-to-Case Thermal Resistance (RJC) | - | - | 0.75 | - | C/W |
2409302230_HUAYI-HYG020N04NR1P_C5121330.pdf
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