High voltage IGBT module HXY MOSFET NGTB30N135IHRWG-HXY 1350V 30A low saturation voltage for EV charger and UPS systems
Key Attributes
Model Number:
NGTB30N135IHRWG-HXY
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
190ns
Td(on):
51ns
Collector-Emitter Breakdown Voltage (Vces):
1.35kV
Reverse Transfer Capacitance (Cres):
18pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.5V@0.5mA
Gate Charge(Qg):
120nC@15V
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
90A
Output Capacitance(Coes):
51pF
Switching Energy(Eoff):
1.3mJ
Turn-On Energy (Eon):
2.6mJ
Mfr. Part #:
NGTB30N135IHRWG-HXY
Package:
TO-247
Product Description
Product Overview
The NGTB30N135IHRWG is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, it is suitable for demanding applications such as UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Model: NGTB30N135IHRWG
- Package: TO-247
Technical Specifications
| Type | VCE (V) | IC (A) | VCE(SAT) (V) | VF (V) | Package | Packing |
| IGBT | 1350 | 30 | 1.65 (Tvj=25C, VGE=15V, IC=30A) | 1.85 (Tvj=25C, IF=30A) | TO-247 | 30PCS |
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Collector emitter voltage | V(BR)CES | Tvj = 25 C | 1350 | - | - | V |
| Collector emitter saturation voltage | VCEsat | VGE = 15 V, IC =30 A, Tvj = 25 C | - | 1.65 | 1.95 | V |
| Collector emitter saturation voltage | VCEsat | VGE = 15 V, IC =30 A, Tvj = 175 C | - | 1.95 | 2.25 | V |
| Diode forward voltage | VF | VGE = 0 V, IC =30 A, Tvj = 25 C | - | 1.85 | 2.0 | V |
| Diode forward voltage | VF | VGE = 0 V, IC =30 A, Tvj = 175 C | - | 1.95 | - | V |
| Gate-emitter threshold voltage | VGE(th) | VCE = VGE, IC = 0.5 mA, Tvj = 25 C | 5.5 | 6.18 | 6.9 | V |
| Zero gate voltage collector current | ICES | VCE = 1350 V, VGE = 0 V, Tvj = 25 C | - | - | 100 | A |
| Gate-emitter leakage current | IGES | VGE = 20 V, VCE = 0 V, Tvj = 25 C | - | - | 200 | nA |
| Transconductance | Gfs | VGE = 15 V, Ic=20A, Tvj = 25 C | - | 30 | - | S |
| Input capacitance | Cies | VGE = 0 V, VCE = 25 V, f = 1MHz | - | 3800 | - | pF |
| Output capacitance | Coes | VGE = 0 V, VCE = 25 V, f = 1MHz | - | 51 | - | pF |
| Reverse transfer capacitance | Cres | VGE = 0 V, VCE = 25 V, f = 1MHz | - | 18 | - | pF |
| Gate charge | Qg | VGE = 0 V to 15 V, IC = 20 A, VCE = 600 V | - | 120 | - | nC |
| Gate to emitter charge | Qge | VGE = 0 V to 15 V, IC = 20 A, VCE = 600 V | - | 35 | - | nC |
| Gate to collector charge | Qgc | VGE = 0 V to 15 V, IC = 20 A, VCE = 600 V | - | 51 | - | nC |
| Turn-on delay time | td(on) | VCC = 600 V, IC =30 A, VGE = 15 V, RG(on) = 10, RG(off) = 10, Tvj = 25C | - | 51 | - | ns |
| Rise time | tr | VCC = 600 V, IC =30 A, VGE = 15 V, RG(on) = 10, RG(off) = 10, Tvj = 25C | - | 52 | - | ns |
| Turn-off delay time | td(off) | VCC = 600 V, IC =30 A, VGE = 15 V, RG(on) = 10, RG(off) = 10, Tvj = 25C | - | 190 | - | ns |
| Fall time | tf | VCC = 600 V, IC =30 A, VGE = 15 V, RG(on) = 10, RG(off) = 10, Tvj = 25C | - | 152 | - | ns |
| Turn-on energy | Eon | VCC = 600 V, IC =30 A, VGE = 15 V, RG(on) = 10, RG(off) = 10, Tvj = 25C | - | 2.6 | - | mJ |
| Turn-off energy | Eoff | VCC = 600 V, IC =30 A, VGE = 15 V, RG(on) = 10, RG(off) = 10, Tvj = 25C | - | 1.3 | - | mJ |
| Total switching energy | Ets | VCC = 600 V, IC =30 A, VGE = 15 V, RG(on) = 10, RG(off) = 10, Tvj = 25C | - | 3.9 | - | mJ |
| Reverse recovery time | trr | VR = 600 V, IF = 30 A, di/dt = 600 A/S, Tvj = 25C | - | 330 | - | ns |
| Reverse recovery charge | Qrr | VR = 600 V, IF = 30 A, di/dt = 600 A/S, Tvj = 25C | - | 2.0 | - | C |
| Peak reverse recovery current | Irrm | VR = 600 V, IF = 30 A, di/dt = 600 A/S, Tvj = 25C | - | 12 | - | A |
| Parameter | Symbol | Conditions | Value | Unit |
| IGBT Thermal resistance junction - case | RthJC | IGBT | 0.6 | C / W |
| IGBT Thermal resistance junction - ambient | RthJA | IGBT | 40 | C / W |
| Parameter | Symbol | Conditions | Value | Unit |
| DC collector current | IC | TC = 25 C | 60 | A |
| DC collector current | IC | TC = 100 C | 30 | A |
| Pulsed collector current | ICM | TC = 25 C | 90 | A |
| Maximum Diode forward current | IF | TC = 25 C | 60 | A |
| Maximum Diode forward current | IF | TC = 100 C | 30 | A |
| Diode pulsed current | IFM | TC = 25 C | 90 | A |
| Gate source voltage | VGE | Tvj = 25 C | 20 | V |
| Transient Gate-Emitter Voltage | VGE | (tp 10s, D < 0.010) | 30 | V |
| Power dissipation | Ptot | TC = 25 C | 250 | W |
| Power dissipation | Ptot | TC = 100 C | 125 | W |
| Operating Junction Temperature Range | Tvj | - | -40 to +175 | C |
| Storage Temperature Range | Tstg | - | -55 to +150 | C |
2509181737_HXY-MOSFET-NGTB30N135IHRWG-HXY_C49003400.pdf
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