High Current Single N Channel MOSFET HUAYI HYG013N04NR1B6 with RoHS and Halogen Free Certification
Key Attributes
Model Number:
HYG013N04NR1B6
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
377A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.1mΩ@10V,60A
Gate Threshold Voltage (Vgs(th)):
4V
Number:
1 N-channel
Pd - Power Dissipation:
333W
Gate Charge(Qg):
207.9nC@10V
Mfr. Part #:
HYG013N04NR1B6
Package:
TO-263-6
Product Description
Product Overview
The HYG013N04NR1B6 is a single N-Channel Enhancement Mode MOSFET from Hymexa, designed for demanding applications. It features a high continuous drain current of 377A and a low on-resistance of 1.1 m (typ.) at VGS = 10V, making it ideal for load switching and lithium battery protection boards. This MOSFET is 100% avalanche tested, ensuring reliability and ruggedness. Halogen-free options are available.
Product Attributes
- Brand: Hymexa
- Origin: China
- Certifications: RoHS compliant, Halogen-free
Technical Specifications
| Parameter | Condition | Value | Unit |
| Absolute Maximum Ratings | Drain-Source Voltage (VDSS) | 40 | V |
| Gate-Source Voltage (VGSS) | ±25 | V | |
| Junction Temperature Range (TJ) | -55 to 175 | °C | |
| Storage Temperature Range (TSTG) | -55 to 175 | °C | |
| Common Ratings | Continuous Drain Current (ID) @ Tc=25°C | 377 | A |
| Continuous Drain Current (ID) @ Tc=100°C | 267 | A | |
| Pulsed Drain Current (IDM) @ Tc=25°C | 1400 | A | |
| Maximum Power Dissipation (PD) @ Tc=25°C | 333 | W | |
| Maximum Power Dissipation (PD) @ Tc=100°C | 167 | W | |
| Thermal Resistance | Junction-to-Case (RθJC) | 0.45 | °C/W |
| Junction-to-Ambient (RθJA) ** | 40.0 | °C/W | |
| Electrical Characteristics | Drain-Source Breakdown Voltage (BVDSS) @ VGS=0V, IDS=250μA | 40 | V |
| Gate Threshold Voltage (VGS(th)) @ VDS=VGS, IDS=250μA | 2.7 | V | |
| Drain-Source On-State Resistance (RDS(ON)) @ VGS=10V, IDS=60A | 1.1 | mΩ | |
| Diode Forward Voltage (VSD) @ ISD=60A, VGS=0V | 0.8 | V | |
| Total Gate Charge (Qg) @ VDS =32V, VGS=10V, ID=60A | 207.9 | nC | |
| Dynamic Characteristics | Input Capacitance (Ciss) @ VGS=0V, VDS=25V, F=1.0MHz | 8380 | pF |
| Output Capacitance (Coss) @ VGS=0V, VDS=25V, F=1.0MHz | 1586 | pF | |
| Reverse Transfer Capacitance (Crss) @ VGS=0V, VDS=25V, F=1.0MHz | 1452 | pF |
2411220306_HUAYI-HYG013N04NR1B6_C5632439.pdf
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