N Channel Enhancement Mode MOSFET HYG063N09NS1P with 90V 120A and Low On Resistance Avalanche Tested
Key Attributes
Model Number:
HYG063N09NS1P
Product Custom Attributes
Drain To Source Voltage:
90V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5.5mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
53pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.2nF
Pd - Power Dissipation:
187.5W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
HYG063N09NS1P
Package:
TO-220FB-3L
Product Description
Product Overview
The HYG063N09NS1P is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers a high current capability of 90V/120A with a low on-resistance of 5.5 m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged. Halogen-free and RoHS compliant versions are available.
Product Attributes
- Brand: HYM (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free Devices Available
Technical Specifications
| Model | Feature | RDS(ON) | VDSS | ID | Package |
| HYG063N09NS1P | N-Channel Enhancement Mode MOSFET, 100% Avalanche Tested, Reliable and Rugged | 5.5 m(typ.)@VGS = 10V | 90 V | 120 A | TO-220FB-3L |
Absolute Maximum Ratings
| Symbol | Parameter | Rating | Unit |
| VDSS | Drain-Source Voltage | 90 | V |
| VGSS | Gate-Source Voltage | 20 | V |
| TJ | Junction Temperature Range | -55 to 175 | C |
| TSTG | Storage Temperature Range | -55 to 175 | C |
| ID | Continuous Drain Current (Tc=25C) | 120 | A |
| ID | Continuous Drain Current (Tc=100C) | 84.9 | A |
| IDM | Pulsed Drain Current (Tc=25C) | 320 | A |
| PD | Maximum Power Dissipation (Tc=25C) | 187.5 | W |
| PD | Maximum Power Dissipation (Tc=100C) | 93.7 | W |
| RJC | Thermal Resistance, Junction-to-Case | 0.8 | C/W |
| RJA | Thermal Resistance, Junction-to-Ambient | 62.5 | C/W |
| EAS | Single Pulsed-Avalanche Energy (L=0.3mH) | 327 | mJ |
Electrical Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Static Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS= 250A | 90 | - | - | V |
| IDSS | Drain-to-Source Leakage Current | VDS=90V,VGS=0V | - | - | 1 | A |
| IDSS | Drain-to-Source Leakage Current | TJ=125C | - | - | 50 | A |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS= 250A | 2 | 3 | 4 | V |
| IGSS | Gate-Source Leakage Current | VGS=20V,VDS=0V | - | - | 100 | nA |
| RDS(ON) | Drain-Source On-State Resistance | VGS= 10V,IDS=50A | - | 5.5 | 6.5 | m |
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | ISD=50A,VGS=0V | - | 0.92 | 1.3 | V |
| trr | Reverse Recovery Time | ISD=50A,dISD/dt=100A/s | - | 53 | - | ns |
| Qrr | Reverse Recovery Charge | - | - | 86 | - | nC |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | - | 2.1 | - | |
| Ciss | Input Capacitance | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 3200 | - | pF |
| Coss | Output Capacitance | - | - | 1206 | - | pF |
| Crss | Reverse Transfer Capacitance | - | - | 53 | - | pF |
| td(ON) | Turn-on Delay Time | VDD= 40V,RG=4.0, IDS= 50A,VGS= 10V | - | 19 | - | ns |
| Tr | Turn-on Rise Time | - | - | 48 | - | ns |
| td(OFF) | Turn-off Delay Time | - | - | 47 | - | ns |
| Tf | Turn-off Fall Time | - | - | 43 | - | ns |
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS =64V, VGS=10V,IDs=50A | - | 60 | - | nC |
| Qgs | Gate-Source Charge | - | - | 20 | - | nC |
| Qgd | Gate-Drain Charge | - | - | 18 | - | nC |
2410121247_HUAYI-HYG063N09NS1P_C5121324.pdf
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