N Channel Enhancement Mode MOSFET 68V 80A Current Rating HUAYI HYG067N07NQ1P Lead Free and Green Device
Key Attributes
Model Number:
HYG067N07NQ1P
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6.5mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
139.3pF
Number:
1 N-channel
Input Capacitance(Ciss):
7.1931nF
Pd - Power Dissipation:
136W
Gate Charge(Qg):
114.8nC
Mfr. Part #:
HYG067N07NQ1P
Package:
TO-220FB-3L
Product Description
N-Channel Enhancement Mode MOSFET
This N-Channel Enhancement Mode MOSFET features a high voltage and current rating (68V/80A) with a low on-resistance (6.5m typ. @VGS = 10V). It is 100% avalanche tested, reliable, rugged, and available in lead-free and green (RoHS compliant) versions. Ideal for portable equipment, battery-powered systems, DC-DC converters, switching applications, and motor control.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions | Min | Typ | Max |
| Absolute Maximum Ratings | |||||||
| Drain-Source Voltage | VDSS | 68 | V | ||||
| Gate-Source Voltage | VGSS | 20 | V | ||||
| Maximum Junction Temperature | TJ | -55 to 175 | C | ||||
| Storage Temperature Range | TSTG | -55 to 175 | C | ||||
| Source Current-Continuous (Body Diode) | IS | 80 | A | Tc=25C | |||
| Pulsed Drain Current | IDM | 240** | A | Tc=25C | |||
| Continuous Drain Current | ID | 80 | A | Tc=25C | |||
| Continuous Drain Current | ID | 56.6 | A | Tc=100C | |||
| Maximum Power Dissipation | PD | 136 | W | Tc=25C | |||
| Maximum Power Dissipation | PD | 68 | W | Tc=100C | |||
| Thermal Resistance, Junction-to-Case | RJC | C/W | 1.1 | ||||
| Thermal Resistance, Junction-to-Ambient | RJA | C/W | Surface mounted on 1in FR-4 board. | 62.5 | |||
| Single Pulsed-Avalanche Energy | EAS | 203*** | mJ | L=0.3mH | |||
| Electrical Characteristics (Tc =25C Unless Otherwise Noted) | |||||||
| Drain-Source Breakdown Voltage | BVDSS | 68 | V | VGS=0V,IDS= 250A | 68 | - | - |
| Drain-to-Source Leakage Current | IDSS | 1 | A | VDS= 68V,VGS=0V | - | - | |
| Drain-to-Source Leakage Current | IDSS | 50 | A | TJ=125C | - | - | |
| Gate Threshold Voltage | VGS(th) | 2 | V | VDS=VGS, IDS= 250A | 3 | 4 | |
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS=20V,VDS=0V | - | - | |
| Drain-Source On-State Resistance | RDS(ON) | 6.5 | m | VGS= 10V,IDS= 40A | - | 7.5 | |
| Diode Characteristics | |||||||
| Diode Forward Voltage | VSD | 0.84 | V | ISD=40A,VGS=0V | - | 1 | |
| Reverse Recovery Time | trr | 33 | ns | ISD=40A,dISD/dt=100A/s | - | - | |
| Reverse Recovery Charge | Qrr | 61 | nC | ISD=40A,dISD/dt=100A/s | - | - | |
| Electrical Characteristics Cont. (Tc =25C Unless Otherwise Noted) | |||||||
| Gate Resistance | RG | 0.93 | VGS=0V,VDS=0V,F=1MHz | - | - | ||
| Input Capacitance | Ciss | 7193.1 | pF | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | - | |
| Output Capacitance | Coss | 233.2 | pF | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | - | |
| Reverse Transfer Capacitance | Crss | 139.3 | pF | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | - | |
| Turn-on Delay Time | td(ON) | 15 | ns | VDD= 34V,RG=3, IDS= 30A,VGS= 10V | - | - | |
| Turn-on Rise Time | Tr | 13 | ns | VDD= 34V,RG=3, IDS= 30A,VGS= 10V | - | - | |
| Turn-off Delay Time | td(OFF) | 20 | ns | VDD= 34V,RG=3, IDS= 30A,VGS= 10V | - | - | |
| Turn-off Fall Time | Tf | 8 | ns | VDD= 34V,RG=3, IDS= 30A,VGS= 10V | - | - | |
| Gate Charge Characteristics | |||||||
| Total Gate Charge | Qg | 114.8 | nC | VDS = 48V, VGS= 10V, IDs= 30A | - | - | |
| Gate-Source Charge | Qgs | 22.5 | nC | VDS = 48V, VGS= 10V, IDs= 30A | - | - | |
| Gate-Drain Charge | Qgd | 23.2 | nC | VDS = 48V, VGS= 10V, IDs= 30A | - | - | |
2409302330_HUAYI-HYG067N07NQ1P_C5121332.pdf
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