Glass passivated triac HXY MOSFET BT134-600E designed for industrial motor control lighting and heating
Key Attributes
Model Number:
BT134-600E
Product Custom Attributes
Holding Current (Ih):
30mA
Current - Gate Trigger(Igt):
10mA
Voltage - On State(Vtm):
1.65V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
4A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
20A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
2V
Mfr. Part #:
BT134-600E
Package:
TO-252-2L
Product Description
Product Overview
Glass passivated triacs in a plastic package, designed for high bidirectional transient and blocking voltage capability and excellent thermal cycling performance. Ideal for motor control, industrial and domestic lighting, heating, and static switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen
- Package: TO-252-2L
- Certifications: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Symbol | Parameter | Conditions | Value | Unit |
| VDRM /VRRM | repetitive peak off-state voltage | (Ta=25C unless otherwise noted) | 600 | V |
| IGM | Peak Gate Current | - | A | |
| VGM | Peak gate voltage | - | V | |
| PGM | Peak gate power | 0.5 | W | |
| Tj G(AV) | Junction Temperature Average Gate Power Dissipation | -40 ~ 125 | C | |
| IT(RMS) | RMS on-state current | 7 | A | |
| I TSM | Non repetitive surge peak on-state current | t = 2ms T j =25 C | 20 | A |
| I t | I t for fusing | t =16.7ms T j =25 C | 16 | A |
| I t | I t for fusing | t = 10 ms | 2 | A s |
| dl/dt | Critical-rate of rise of commutation current | IG=2IGT tr100ns F=120Hz | 50 | A/us |
| VDRM=VRRM | Repetitive Peak Off-State Current | Tj =125C | 0.8 | mA |
| VRRM | Repetitive Peak Reverse Current | Tj =125C | 0.8 | mA |
| VGD | Gate non-trigger voltage | VD= 1/2V DRM | 5 | V |
| VTM | On-state voltage | IT=2A,tp=380us | 1.65 | V |
| IGT | Gate trigger current | T2(+), G(+) | 2 | mA |
| IGT | Gate trigger current | T2(+), G(-) | 2 | mA |
| IGT | Gate trigger current | T2(-), G(-) | 2 | mA |
| IGT | Gate trigger current | T2(-), G(+) | 10 | mA |
| VGT | Gate trigger voltage | T2(+), G(+) | 2.5 | V |
| VGT | Gate trigger voltage | T2(+), G(-), T2(-), G(-), T2(-), G(+) | 2.5 | V |
| IH | Holding current | VD=12V,IGT=100mA | 30 | mA |
| dV/dt | Critical-rate of rise of commutating voltage | VDM=67%V DRM, Tj =125C | 20 | V/us |
| t gt | Turn-on time | ITM =16A ,VDM=V DRM, Tj =125C | 2 | us |
| (dl/dt)c | Critical-rate of rise of commutation current | VDM=400V IG =0.1A,dlG/dt=5A/uS | 5.4 | A/ms |
Package Information
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 0.483 TYP. | 0.190 TYP. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 TYP. | 0.114 TYP. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 TYP. | 0.063 TYP. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 TYP. | 0.211 TYP. |
2508121550_HXY-MOSFET-BT134-600E_C50275345.pdf
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