High voltage thyristor HXY MOSFET Z0109NN5AA4-HXY suitable for hair straighteners and igniter electronic components
Key Attributes
Model Number:
Z0109NN5AA4-HXY
Product Custom Attributes
Mfr. Part #:
Z0109NN5AA4-HXY
Package:
SOT-223
Product Description
Product Overview
The Z0109NN5AA4 thyristors offer a high dv/dt rate and strong resistance to electromagnetic interference. They are particularly recommended for applications such as residual current circuit breakers, hair straighteners, and igniters.
Product Attributes
- Brand: HUAXUANYANG HXY
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Material: Plastic-Encapsulate
- Website: www.hxymos.com
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDRM/VRRM | Repetitive peak off-state voltage | 800 | V | |||
| IT(RMS) | RMS on-state current | 1.0 | A | |||
| IGM | Peak Gate Current | 1 | A | |||
| VGM | Peak gate voltage | 0.8 | V | |||
| PGM | Peak gate power | 1 | W | |||
| PG(AV) | Average Gate Power Dissipation | 0.4 | W | |||
| Tj | Junction Temperature | 125 | C | |||
| ITSM | Non-repetitive surge peak on-state current | t=20ms Tj=25C | 8 | A | ||
| I2t | It for fusing | t=16.7ms Tj=25C | 10 | As | ||
| dl/dt | Critical-rate of rise of commutation current | IG=2IGT t 100ns | 50 | A/s | ||
| (dV/dt)c | Critical-rate of rise of commutation voltage | Gate open Tj =125 C VDM=400V, (dl/dt)c=5.4A/ms | 20 | V/s | ||
| t r | Turn-on time | I TM =16A ,VDM=V DRM(MAX) IG =0.1A,dl/dt=5A/s | 2 | s | ||
| Tstg | Storage Temperature | -40 | 150 | C | ||
| Electrical Characteristics (Tj=25C unless otherwise specified) | ||||||
| IDRM,IRRM | Repetitive Peak Off-State Current Repetitive Peak Reverse Current | VDRM = VRRM V Tj =25 C | 0.2 | mA | ||
| IDRM,IRRM | Repetitive Peak Off-State Current Repetitive Peak Reverse Current | VDRM = VRRM V Tj =125 C | 1 | mA | ||
| VGD(max) | Gate non-trigger voltage | V D = 1/2VDRM | 0.8 | V | ||
| VTM | On-state voltage | IT= 1A,tp=380s | 1.65 | V | ||
| IGT | Gate trigger current | VD = 12V, RL=100 | 10 | mA | ||
| VGT | Gate trigger voltage | VD = 12V, RL=100 | 2.5 | V | ||
| IH | Holding current | V D = 12V, I GT =0mA | 30 | mA | ||
| dV/dt | Rate of change of commutating voltage | Tj =125C | 20 | V/s | ||
| (dV/dt)c | Critical-rate of rise of commutation voltage | Gate open Tj =125 C VDM=400V, (dl/dt)c=5.4A/ms | 20 | V/s | ||
2511211720_HXY-MOSFET-Z0109NN5AA4-HXY_C52988583.pdf
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