rugged N Channel Enhancement Mode MOSFET HUAYI HYG025N06LS2P ideal for synchronous buck converters
Key Attributes
Model Number:
HYG025N06LS2P
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
182A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5.2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
53pF
Number:
1 N-channel
Output Capacitance(Coss):
1.084nF
Input Capacitance(Ciss):
3.976nF
Pd - Power Dissipation:
230.8W
Gate Charge(Qg):
62nC@10V
Mfr. Part #:
HYG025N06LS2P
Package:
TO-220FB-3L
Product Description
HYG025N06LS2P/B N-Channel Enhancement Mode MOSFET
The HYG025N06LS2P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for demanding applications. It features low on-resistance (RDS(ON)) of 2.7 m (typ.) at VGS = 10V and 3.8 m (typ.) at VGS = 4.5V, 100% avalanche tested, and a reliable and rugged construction. This device is available in Halogen Free and Green (RoHS Compliant) versions. It is ideally suited for high-frequency point-of-load synchronous buck converters and power tool applications.
Product Attributes
- Brand: Hymexa Microelectronics
- Origin: China
- Material: N-Channel Enhancement Mode MOSFET
- Certifications: RoHS Compliant, Halogen Free, Green Devices Available
Technical Specifications
| Parameter | Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|
| RDS(ON) Drain-Source On-State Resistance | VGS=10V, IDS=40A | - | 2.7 | 3.5 | m |
| VGS=4.5V, IDS=40A | - | 3.8 | 5.2 | m | |
| VDSS Drain-Source Voltage | VGS=0V, IDS=250A | 60 | - | - | V |
| ID Continuous Drain Current | Tc=25C | - | 182 | - | A |
| ID Continuous Drain Current | Tc=100C | - | 128 | - | A |
| PD Maximum Power Dissipation | Tc=25C | - | 230.8 | - | W |
| VGS(th) Gate Threshold Voltage | VDS=VGS, IDS=250A | 1 | 2 | 3 | V |
| EAS Single Pulsed-Avalanche Energy | L=0.3mH | - | 255 | - | mJ |
| Capacitance | Ciss | - | 3976 | - | pF |
| Coss | - | 1084 | - | pF | |
| Crss | - | 53 | - | pF | |
| Gate Charge | Qg Total Gate Charge (VGS=10V) | - | 62 | - | nC |
| Qgs Gate-Source Charge | - | 16 | - | nC | |
| Qgd Gate-Drain Charge | - | 9.6 | - | nC |
2410121321_HUAYI-HYG025N06LS2P_C2891582.pdf
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