Switching MOSFET HYG020N04NA1P Featuring 220A Continuous Drain Current and Low RDS ON for Performance
Key Attributes
Model Number:
HYG020N04NA1P
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
220A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
650pF
Number:
1 N-channel
Output Capacitance(Coss):
820pF
Input Capacitance(Ciss):
5.755nF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
134.2nC@10V
Mfr. Part #:
HYG020N04NA1P
Package:
TO-220FB-3L
Product Description
Product Overview
The HYG020N04NA1 is an N-Channel Enhancement Mode MOSFET designed for switching applications. It offers high performance with a low on-state resistance (RDS(ON) of 1.8 m typ. @VGS = 10V) and a high continuous drain current of 220A. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green options available. It is suitable for applications such as Li-battery protection.
Product Attributes
- Brand: HYM (implied by www.hymexa.com)
- Origin: China (implied by Huayi Microelectronics Co., Ltd.)
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 (MSL classification)
Technical Specifications
| Model | Package Type | Drain-Source Voltage (V) | Continuous Drain Current (A) @Tc=25C | RDS(ON) (m) @VGS=10V | Pulsed Drain Current (A) @Tc=25C | Max Power Dissipation (W) @Tc=25C | Gate Threshold Voltage (V) |
| HYG020N04NA1P | TO-220FB-3L | 40 | 220 | 1.8 (typ.) | 700 | 200 | 2.0 - 4.0 |
| HYG020N04NA1B | TO-263-2L | 40 | 220 | 1.8 (typ.) | 700 | 200 | 2.0 - 4.0 |
| HYG020N04NA1PL | TO-3PM-3L | 40 | 220 | 1.8 (typ.) | 700 | 200 | 2.0 - 4.0 |
2409302203_HUAYI-HYG020N04NA1P_C2857456.pdf
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