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quality Low noise silicon bipolar RF transistor Infineon BFR183E6327HTSA1 for high gain broadband amplifiers factory
quality Low noise silicon bipolar RF transistor Infineon BFR183E6327HTSA1 for high gain broadband amplifiers factory

Low noise silicon bipolar RF transistor Infineon BFR183E6327HTSA1 for high gain broadband amplifiers

Key Attributes
Model Number: BFR183E6327HTSA1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
450mW
Transition Frequency(fT):
8GHz
Type:
NPN
Current - Collector(Ic):
65mA
Collector - Emitter Voltage VCEO:
12V
Mfr. Part #:
BFR183E6327HTSA1
Package:
SOT-23-3
Product Description

Product Overview

The BFR183 is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at collector currents ranging from 2 mA to 30 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This device is Pb-free, RoHS compliant, and a qualification report according to AEC-Q101 is available. It is an ESD-sensitive device and requires careful handling.

Product Attributes

  • Brand: Infineon Technologies
  • Package: SOT23
  • Certifications: Pb-free (RoHS compliant), AEC-Q101 available

Technical Specifications

Parameter Symbol Value Unit Conditions
Collector-emitter voltage VCEO 12 V
Collector-emitter voltage VCES 20 V
Collector-base voltage VCBO 20 V
Emitter-base voltage VEBO 2 V
Collector current IC 65 mA
Base current IB 5 mA
Total power dissipation Ptot 450 mW TS 60 C
Junction temperature TJ 150 C
Storage temperature TStg -55 ... 150 C
Thermal Resistance Junction - soldering point RthJS 200 K/W
Collector-emitter breakdown voltage V(BR)CEO 12 V IC = 1 mA, IB = 0
Collector-emitter cutoff current ICES 100 A VCE = 20 V, VBE = 0
Collector-base cutoff current ICBO 100 nA VCB = 10 V, IE = 0
Emitter-base cutoff current IEBO 1 A VEB = 1 V, IC = 0
DC current gain hFE 70 - 140 - IC = 15 mA, VCE = 8 V, pulse measured
Transition frequency fT 6 - 8 GHz IC = 25 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance Ccb 0.37 - 0.57 pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded
Collector emitter capacitance Cce 0.2 pF VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded
Emitter-base capacitance Ceb 1.1 pF VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded
Minimum noise figure NFmin 0.9 - 1.4 dB IC = 5 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz / 1.8 GHz
Power gain, maximum stable Gms 17.5 dB IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz
Power gain, maximum available Gma 11.5 dB IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz
Transducer gain |S21e| 14.5 - 9 dB IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz / 1.8 MHz

2410121811_Infineon-BFR183E6327HTSA1_C3040063.pdf

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