NPN bipolar RF transistor Infineon BF776H6327XTSA1 designed for low noise amplifier applications
Key Attributes
Model Number:
BF776H6327XTSA1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
1.2V
Current - Collector Cutoff:
1nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
46GHz
Type:
NPN
Current - Collector(Ic):
50mA
Collector - Emitter Voltage VCEO:
4.7V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BF776H6327XTSA1
Package:
SOT-343-4
Product Description
Product Overview
The BF776 is a high-performance NPN bipolar RF transistor designed for low-noise amplifier applications. It offers a low minimum noise figure of typically 0.8 dB @ 1.8 GHz and is suitable for a wide range of non-automotive applications including WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB, UMTS/LTE, and ISM bands. The transistor comes in an easy-to-use standard package with visible leads and is Pb-free (RoHS compliant).
Product Attributes
- Brand: Infineon Technologies
- Certifications: Pb-free (RoHS compliant)
- Package Type: SOT343
- Type Marking: R3s
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Maximum Ratings | ||||
| Collector-emitter voltage (TA = 25 C) | VCEO | 4.0 | V | |
| Collector-emitter voltage (TA = -55 C) | VCEO | 3.5 | V | |
| Collector-emitter voltage | VCES | 13 | V | |
| Collector-base voltage | VCBO | 13 | V | |
| Emitter-base voltage | VEBO | 1.2 | V | |
| Collector current | IC | 50 | mA | |
| Base current | IB | 3 | mA | |
| Total power dissipation | Ptot | 200 | mW | TS 90C |
| Junction temperature | TJ | 150 | C | |
| Ambient temperature | TA | -55 ... 150 | C | |
| Storage temperature | TStg | -55 ... 150 | C | |
| Thermal Resistance | ||||
| Junction - soldering point | RthJS | 300 | K/W | TS is measured on the emitter lead at the soldering point to the pcb |
| Electrical Characteristics (DC) | ||||
| Collector-emitter breakdown voltage | V(BR)CEO | 4 / 4.7 | V | IC = 1 mA, IB = 0 |
| Collector-emitter cutoff current | ICES | 1 | nA | VCE = 5 V, VBE = 0 |
| Collector-base cutoff current | ICBO | 1 | nA | VCB = 5 V, IE = 0 |
| Emitter-base cutoff current | IEBO | 10 | A | VEB = 0.5 V, IC = 0 |
| DC current gain | hFE | 180 | IC = 30 mA, VCE = 3 V, pulse measured | |
| Electrical Characteristics (AC) | ||||
| Transition frequency | fT | 46 | GHz | IC = 30 mA, VCE = 3 V, f = 1 GHz |
| Collector-base capacitance | Ccb | 0.09 | pF | VCB = 3 V, f = 1 MHz, VBE = 0 , emitter grounded |
| Collector emitter capacitance | Cce | 0.25 | pF | VCE = 3 V, f = 1 MHz, VBE = 0 , base grounded |
| Emitter-base capacitance | Ceb | 0.5 | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded |
| Noise figure | F | 0.8 / 1.3 | dB | IC = 5 mA, VCE = 3 V, f = 1.8 GHz / 6 GHz, ZS = ZSopt |
| Power gain, maximum stable | Gms | 24 | dB | IC = 30 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz |
| Power gain, maximum available | Gma | 12.5 | dB | IC = 30 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz |
| Transducer gain | |S21e| | 21.5 / 11 | dB | IC = 30 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz / 6 GHz |
| Third order intercept point at output | IP3 | 28 | dBm | VCE = 3 V, IC = 30 mA, ZS=ZL=50 , f = 1.8 GHz |
| 1dB Compression point at output | P-1dB | 13 | dBm | IC = 30 mA, VCE = 3 V, ZS=ZL=50 , f = 1.8 GHz |
2401291341_Infineon-BF776H6327XTSA1_C3199239.pdf
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