N Channel Enhancement Mode MOSFET HUAYI HYG026N03LS1C2 with RoHS Compliant Green Device Certification
Key Attributes
Model Number:
HYG026N03LS1C2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
1.8V
Reverse Transfer Capacitance (Crss@Vds):
27pF
Number:
1 N-channel
Pd - Power Dissipation:
77W
Input Capacitance(Ciss):
1.532nF
Mfr. Part #:
HYG026N03LS1C2
Package:
PPAK(5x6)
Product Description
HYG026N03LS1C2 - N-Channel Enhancement Mode MOSFET
The HYG026N03LS1C2 is a high-performance N-Channel Enhancement Mode MOSFET designed for various switching applications. It features low on-resistance, 100% avalanche tested, and is available in Halogen Free and Green (RoHS Compliant) options. Ideal for Li-battery protection, DC-DC converters, and motor control.
Product Attributes
- Brand: HYG (Huayi Microelectronics)
- Product Type: N-Channel Enhancement Mode MOSFET
- Package: PDFN8L(5x6)
- Certifications: Halogen Free, Green Devices Available (RoHS Compliant)
- Origin: China
Technical Specifications
| Parameter | Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | Tc=25C Unless Otherwise Noted | - | - | 30 | V |
| Gate-Source Voltage (VGSS) | Tc=25C Unless Otherwise Noted | - | - | ±20 | V |
| Junction Temperature (TJ) | Tc=25C Unless Otherwise Noted | -55 | - | 175 | °C |
| Storage Temperature (TSTG) | Tc=25C Unless Otherwise Noted | -55 | - | 175 | °C |
| Source Current-Continuous (IS) | Body Diode, Tc=25°C, Mounted on Large Heat Sink | - | - | 100 | A |
| Pulsed Drain Current (IDM) | Tc=25°C | - | - | 360 | A |
| Continuous Drain Current (ID) | Tc=25°C | - | - | 100 | A |
| Continuous Drain Current (ID) | Tc=100°C | - | - | 70 | A |
| Maximum Power Dissipation (PD) | Tc=25°C | - | - | 77 | W |
| Maximum Power Dissipation (PD) | Tc=100°C | - | - | 38 | W |
| Thermal Resistance (RθJC) | Junction-to-Case | - | 1.94 | - | °C/W |
| Thermal Resistance (RθJA) | Junction-to-Ambient | - | 80 | - | °C/W |
| Single Pulsed-Avalanche Energy (EAS) | L=0.3mH | - | 105 | - | mJ |
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250µA | 30 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=30V,VGS=0V | - | - | 1 | µA |
| Drain-to-Source Leakage Current (IDSS) | TJ=125°C | - | - | 50 | µA |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250µA | 1.0 | 1.8 | 3.0 | V |
| Gate-Source Leakage Current (IGSS) | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=20A | - | 2.8 | 3.5 | mΩ |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V,IDS=20A | - | 4.5 | 5.6 | mΩ |
| Diode Forward Voltage (VSD) | ISD=20A,VGS=0V | - | 0.81 | 1.2 | V |
| Reverse Recovery Time (trr) | ISD=20A,dISD/dt=100A/µs | - | 16.5 | - | ns |
| Reverse Recovery Charge (Qrr) | - | - | 6.5 | - | nC |
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | - | 3.0 | - | Ω |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1MHz | - | 1532 | - | pF |
| Output Capacitance (Coss) | VGS=0V, VDS=25V, Frequency=1MHz | - | 318 | - | pF |
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=25V, Frequency=1MHz | - | 27 | - | pF |
| Turn-on Delay Time (td(ON)) | VDD=15V,RG=4Ω, IDS=20A,VGS=10V | - | 8 | - | ns |
| Turn-on Rise Time (Tr) | VDD=15V,RG=4Ω, IDS=20A,VGS=10V | - | 48 | - | ns |
| Turn-off Delay Time (td(OFF)) | VDD=15V,RG=4Ω, IDS=20A,VGS=10V | - | 24 | - | ns |
| Turn-off Fall Time (Tf) | VDD=15V,RG=4Ω, IDS=20A,VGS=10V | - | 7 | - | ns |
| Total Gate Charge (Qg) | VGS=10V, VDS=24V, IDs=20A | - | 23 | - | nC |
| Total Gate Charge (Qg) | VGS=4.5V, VDS=24V, IDs=20A | - | 11 | - | nC |
| Gate-Source Charge (Qgs) | VGS=10V, VDS=24V, IDs=20A | - | 6 | - | nC |
| Gate-Drain Charge (Qgd) | VGS=10V, VDS=24V, IDs=20A | - | 3 | - | nC |
| Gate plateau voltage (Vplateau) | VGS=10V, VDS=24V, IDs=20A | - | 3.2 | - | V |
2411212332_HUAYI-HYG026N03LS1C2_C5121298.pdf
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