Power switching N Channel MOSFET HUAYI HYG200N12NS1C2 with 60A continuous drain current capability
Key Attributes
Model Number:
HYG200N12NS1C2
Product Custom Attributes
Drain To Source Voltage:
120V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃
RDS(on):
18.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
16.7pF
Number:
1 N-channel
Output Capacitance(Coss):
333pF
Input Capacitance(Ciss):
2.31nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
33.4nC@10V
Mfr. Part #:
HYG200N12NS1C2
Package:
PDFN-8(5x5.8)
Product Description
HYG200N12NS1C2 N-Channel Enhancement Mode MOSFET
The HYG200N12NS1C2 is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a low on-state resistance (RDS(ON) of 14.7m typ. at VGS = 10V) and a high continuous drain current capability of 60A. This device is 100% avalanche tested, ensuring reliability and ruggedness. It is available in Halogen-Free and Green (RoHS Compliant) versions. Ideal for high-frequency synchronous buck converters and general power switching applications.
Product Attributes
- Brand: HUAYI
- Origin: China
- Material: Halogen-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C | 120 | V | ||
| Gate-Source Voltage | VGSS | Tc=25C | 20 | V | ||
| Maximum Junction Temperature | TJ | -55 | 175 | C | ||
| Storage Temperature Range | TSTG | -55 | 175 | C | ||
| Source Current-Continuous | IS | Tc=25C, Mounted on Large Heat Sink | 60 | A | ||
| Pulsed Drain Current | IDM | Tc=25C | 140 | A | ||
| Continuous Drain Current | ID | Tc=25C | 60 | A | ||
| Continuous Drain Current | ID | Tc=100C | 42 | A | ||
| Maximum Power Dissipation | PD | Tc=25C | 125 | W | ||
| Maximum Power Dissipation | PD | Tc=100C | 62.5 | W | ||
| Thermal Resistance, Junction-to-Case | RJC | 1.2 | C/W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on FR-4 board | 47 | C/W | ||
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH | 126.5 | mJ | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250A | 120 | V | ||
| Drain-to-Source Leakage Current | IDSS | VDS=120V,VGS=0V | 1.0 | A | ||
| Drain-to-Source Leakage Current | IDSS | TJ=125C | 50 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 2 | 3 | 4 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=30A | 14.7 | 18.5 | m | |
| Diode Forward Voltage | VSD | ISD=30A,VGS=0V | 0.88 | 1.3 | V | |
| Reverse Recovery Time | trr | ISD=30A,dISD/dt=100A/s | 45.8 | ns | ||
| Reverse Recovery Charge | Qrr | 88.1 | nC | |||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 3 | |||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | 2310 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=25V, Frequency=1.0MHz | 333 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, Frequency=1.0MHz | 16.7 | pF | ||
| Turn-on Delay Time | td(ON) | VDD=60V,RG=2.5, IDS=30A,VGS=10V | 13.6 | ns | ||
| Turn-on Rise Time | Tr | VDD=60V,RG=2.5, IDS=30A,VGS=10V | 40.5 | ns | ||
| Turn-off Delay Time | td(OFF) | VDD=60V,RG=2.5, IDS=30A,VGS=10V | 22.7 | ns | ||
| Turn-off Fall Time | Tf | VDD=60V,RG=2.5, IDS=30A,VGS=10V | 6.4 | ns | ||
| Total Gate Charge | Qg | VDS=96V, VGS=10V ID=30A | 33.4 | nC | ||
| Gate-Source Charge | Qgs | VDS=96V, VGS=10V ID=30A | 13.9 | nC | ||
| Gate-Drain Charge | Qgd | VDS=96V, VGS=10V ID=30A | 5.5 | nC | ||
2411220156_HUAYI-HYG200N12NS1C2_C2986723.pdf
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