RF transistor Infineon BFP520H6327 silicon germanium based for next generation communication systems
Key Attributes
Model Number:
BFP520H6327
Product Custom Attributes
Pd - Power Dissipation:
100mW
Transition Frequency(fT):
45GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
40mA
Collector - Emitter Voltage VCEO:
2.5V
Mfr. Part #:
BFP520H6327
Package:
SOT-343
Product Description
Infineon RF Transistors
Infineon's RF transistors offer robust, flexible, and reliable solutions for complementary wireless applications. They are designed to enhance system sensitivity, improve interference immunity, and ensure stable signal reception and transmission across multiple bands. With a focus on performance, versatility, supply security, and quality, these transistors are ideal for next-generation mobile systems, infrastructure, and automotive applications.
Product Attributes
- Brand: Infineon
- Material: Silicon-germanium (SiGe) based on B9 technology
- Origin: In-house process builds
Technical Specifications
| Product Series/Generation | Key Features | Technical Benefits | Customer Benefits | Frequency Range | NFmin (dB) | fT (max) (GHz) | Gmax (dB) | OP1dB (dBm) | OIP3 (dBm) | Current Consumption (mA) | ESD Robustness |
|---|---|---|---|---|---|---|---|---|---|---|---|
| RF Transistors 7th Generation (B7HF) | Discrete Heterojunction Bipolar Transistors (HBT) for LNA solutions | Enhanced high-frequency characteristics, reduced parasitic capacitance | Increased RF link budget and SNR, wider coverage, higher order modulation support | 450 MHz to 12 GHz | 0.45 (sub-GHz) to 0.9 (5.5 GHz) | 44 | 19 (at 10 GHz) | +8.5 (at 2.4 GHz) | +19 (at 2.4 GHz) | 13 (at 2.4 GHz) | 1.5 kV HBM |
| RF Transistors 8th Generation (B9HF) | Discrete Heterojunction Bipolar Transistors (HBT) for high-performance LNA solutions | Reduced parasitic capacitance, improved high-frequency characteristics | Increased RF link budget and SNR, support for very high throughput wireless specifications | (Not explicitly specified, but implied to be higher than 7th gen) | 0.6 (at 5.5 GHz) | 80 | (Not explicitly specified, but implied to be higher than 7th gen) | (Not explicitly specified) | (Not explicitly specified) | (Not explicitly specified) | (Not explicitly specified) |
2410122020_Infineon-BFP520H6327_C439779.pdf
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