Power Switching N Channel Enhancement Mode MOSFET HUAYI HY3210B with 100V 120A and Low On Resistance
Key Attributes
Model Number:
HY3210B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
508pF
Number:
1 N-channel
Output Capacitance(Coss):
902pF
Input Capacitance(Ciss):
4.922nF
Pd - Power Dissipation:
237W
Gate Charge(Qg):
120nC@10V
Mfr. Part #:
HY3210B
Package:
TO-263-2L
Product Description
Product Overview
The HY3210P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high current capability (100V/120A) with a low on-resistance of 6.8m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available. It is suitable for use in Uninterruptible Power Supplies and other power switching applications.
Product Attributes
- Brand: HUAYI
- Product Series: HY3210
- Package Options: TO-220FB-3L (P), TO-263-2L (B)
- Certifications: RoHS Compliant, Lead-Free, Green (Lead-free and halogen-free)
- Material: Molding compounds/die attach materials and 100% matte tin plate Termination finish (for lead-free products)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | VDSS | Tc=25C Unless Otherwise Noted | - | - | 100 | V |
| VGSS | - | - | 25 | V | ||
| TJ | - | - | 175 | C | ||
| TSTG | - | -55 | 175 | C | ||
| ID | Tc=25C | - | 120 | - | A | |
| ID | Tc=100C | - | 84 | - | A | |
| Electrical Characteristics | BVDSS | VGS=0V,IDS=250A | 100 | - | - | V |
| IDSS | VDS=100V,VGS=0V | - | - | 1 | A | |
| VGS(th) | VDS=VGS, IDS=250A | 2.0 | 3.0 | 4.0 | V | |
| IGSS | VGS=25V,VDS=0V | - | - | 100 | nA | |
| RDS(ON) | VGS=10V,IDS=60A | - | 6.8 | 8.5 | m | |
| VSD | ISD=60A,VGS=0V | - | 0.8 | 1 | V | |
| trr | ISD=60A,dISD/dt=100A/s | - | 46 | - | ns | |
| Dynamic Characteristics | RG | VGS=0V,VDS=0V,F=1 MHz | - | 1.7 | - | |
| Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 4922 | - | pF | |
| Coss | - | - | 902 | - | pF | |
| Crss | - | - | 508 | - | pF | |
| td(ON) | VDD=50V,RG=6, IDS=60A,VGS=10V | - | 23 | - | ns | |
| Gate Charge Characteristics | Qg | VDS=80V, VGS=10V ID=60A | - | 120 | - | nC |
| Qgs | - | - | 17 | - | nC | |
| Qgd | - | - | 28 | - | nC |
2410122026_HUAYI-HY3210B_C2688729.pdf
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