Low on resistance N channel MOSFET HUAYI HY3306P ideal for battery powered and portable applications
Key Attributes
Model Number:
HY3306P
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
149pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.142nF
Pd - Power Dissipation:
230W
Gate Charge(Qg):
68nC@10V
Mfr. Part #:
HY3306P
Package:
TO-220FB-3L
Product Description
Product Overview
The HY10N30 is a N-channel enhancement mode MOSFET featuring advanced trench technology for low on-resistance. It is avalanche tested, reliable, and rugged, with lead-free and RoHS compliant options available. This MOSFET is suitable for portable equipment and battery-powered systems, including synchronous rectification applications.
Product Attributes
- Brand: HY
- Origin: XI AN HUAYI MICROELECTRONICS CO., LTD.
- Certifications: RoHS Compliant, Halogen Free
Technical Specifications
| Symbol | Parameter | Test Conditions | Unit | Min | Typ | Max |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | V | 30 | |||
| VGSS | Gate-Source Voltage | V | ±20 | |||
| TJ | Max. Junction Temperature | °C | 150 | |||
| TSTG | Storage Temperature Range | °C | -55 | 150 | ||
| ID | Continuous Drain Current (TC=25°C, Unless Otherwise Noted) | A | 50 | |||
| IDM | Pulsed Drain Current (TC=25°C) | A | 200 | |||
| PD | Max. Power Dissipation (TC=25°C) | W | 250 | |||
| RthJC | Thermal Resistance, Junction to Case | °C/W | 0.5 | |||
| RthJA | Thermal Resistance, Junction to Ambient | (Surface mounted on 1in. FR-4 board) | °C/W | 62.5 | ||
| Electrical Characteristics (TC=25°C Unless Otherwise Noted) | ||||||
| BVDSS | Drain Source Breakdown Voltage | VGS=0V, ID=250µA | V | 30 | ||
| IDSS | Drain to Source Leakage Current | VDS=30V, VGS=0V | µA | 1 | 10 | |
| VDS=30V, VGS=0V, TJ=125°C | µA | 10 | ||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250µA | V | 1 | 1.3 | 1.6 |
| IGSS | Gate Source Leakage Current | VGS=±20V, VDS=0V | nA | ±100 | ||
| RDS(ON) | Drain Source On State Resistance | VGS=10V, IDS=25A | mΩ | 0.6 | 0.8 | |
| VSD | Diode Forward Voltage | ISD=25A, VGS=0V | V | 1 | 1.2 | |
| trr | Reverse Recovery Time | ISD=25A, dISD/dt=100A/µs | ns | 50 | ||
| Qrr | Reverse Recovery Charge | ISD=25A, dISD/dt=100A/µs | nC | 100 | ||
| Dynamic Characteristics | ||||||
| Rg | Gate Resistance | VGS=0V, VDS=0V, f=1MHz | Ω | 50 | ||
| Ciss | Input Capacitance | VGS=0V, VDS=15V, f=1MHz | pF | 1500 | 2000 | |
| Coss | Output Capacitance | VGS=0V, VDS=15V, f=1MHz | pF | 300 | 400 | |
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS=15V, f=1MHz | pF | 200 | 260 | |
| td(on) | Turn on Delay Time | VDD=15V, R L=0.6Ω, ID=25A, VGS=10V | ns | 10 | ||
| tr | Turn on Rise Time | VDD=15V, R L=0.6Ω, ID=25A, VGS=10V | ns | 15 | ||
| td(off) | Turn off Delay Time | VDD=15V, R L=0.6Ω, ID=25A, VGS=10V | ns | 20 | ||
| tf | Turn off Fall Time | VDD=15V, R L=0.6Ω, ID=25A, VGS=10V | ns | 10 | ||
| Qg | Total Gate Charge | VDS=15V, IDS=25A, VGS=10V | nC | 45 | 60 | |
| Qgs | Gate Source Charge | VDS=15V, IDS=25A, VGS=10V | nC | 8 | ||
| Qgd | Gate Drain Charge | VDS=15V, IDS=25A, VGS=10V | nC | 15 | ||
2411220228_HUAYI-HY3306P_C357985.pdf
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