Power Management and Switching MOSFET HUAYI HY3610P N Channel Enhancement Mode for Inverter Systems

Key Attributes
Model Number: HY3610P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
295pF
Number:
1 N-channel
Output Capacitance(Coss):
996pF
Input Capacitance(Ciss):
16.2nF
Pd - Power Dissipation:
328W
Gate Charge(Qg):
201nC@10V
Mfr. Part #:
HY3610P
Package:
TO-220
Product Description

Product Overview

The HY3610P/M/B/PS/PM is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with low on-resistance and is available in lead-free and green (RoHS compliant) options. The device is 100% avalanche tested for reliability and ruggedness.

Product Attributes

  • Brand: HUAYI
  • Origin: China
  • Certifications: RoHS Compliant, Lead Free

Technical Specifications

ModelPackage TypeDrain-Source Voltage (VDSS)Continuous Drain Current (ID) @ TC=25CRDS(ON) @ VGS=10VApplications
HY3610P/M/B/PS/PMTO-220FB-3L100V160A4.5 m (typ.)Power Management for Inverter Systems, Switching application
HY3610P/M/B/PS/PMTO-220FB-3S100V160A4.5 m (typ.)Power Management for Inverter Systems, Switching application
HY3610P/M/B/PS/PMTO-263-2L100V160A4.5 m (typ.)Power Management for Inverter Systems, Switching application
HY3610P/M/B/PS/PMTO-3PS-3L100V160A4.5 m (typ.)Power Management for Inverter Systems, Switching application
HY3610P/M/B/PS/PMTO-3PM-3S100V160A4.5 m (typ.)Power Management for Inverter Systems, Switching application

2411220100_HUAYI-HY3610P_C2942891.pdf

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