Power Management and Switching MOSFET HUAYI HY3610P N Channel Enhancement Mode for Inverter Systems
Product Overview
The HY3610P/M/B/PS/PM is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with low on-resistance and is available in lead-free and green (RoHS compliant) options. The device is 100% avalanche tested for reliability and ruggedness.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS Compliant, Lead Free
Technical Specifications
| Model | Package Type | Drain-Source Voltage (VDSS) | Continuous Drain Current (ID) @ TC=25C | RDS(ON) @ VGS=10V | Applications |
| HY3610P/M/B/PS/PM | TO-220FB-3L | 100V | 160A | 4.5 m (typ.) | Power Management for Inverter Systems, Switching application |
| HY3610P/M/B/PS/PM | TO-220FB-3S | 100V | 160A | 4.5 m (typ.) | Power Management for Inverter Systems, Switching application |
| HY3610P/M/B/PS/PM | TO-263-2L | 100V | 160A | 4.5 m (typ.) | Power Management for Inverter Systems, Switching application |
| HY3610P/M/B/PS/PM | TO-3PS-3L | 100V | 160A | 4.5 m (typ.) | Power Management for Inverter Systems, Switching application |
| HY3610P/M/B/PS/PM | TO-3PM-3S | 100V | 160A | 4.5 m (typ.) | Power Management for Inverter Systems, Switching application |
2411220100_HUAYI-HY3610P_C2942891.pdf
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