Low on state resistance HUAYI HYG016N04LS1P MOSFET ideal for high current power management solutions
Product Overview
The HYG016N04LS1P/B is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for efficient power management. It features a low on-state resistance (RDS(ON)) of 1.4 m (typ.) at VGS = 10V and 1.8 m (typ.) at VGS = 4.5V, making it suitable for high-current applications. This MOSFET is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available (RoHS Compliant). It is ideal for power management in DC/DC converters, battery management systems, and inverter systems.
Product Attributes
- Brand: Hymexa
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 MSL Classification
Technical Specifications
| Model | Package | VDSS (V) | ID (A) @ Tc=25C | RDS(ON) (m) @ VGS=10V | RDS(ON) (m) @ VGS=4.5V | EAS (mJ) @ L=0.3mH |
| HYG016N04LS1P/B | TO-220FB-3L | 40 | 240 | 1.4 (typ.) | 1.8 (typ.) | 758** |
| HYG016N04LS1P/B | TO-263-2L | 40 | 240 | 1.4 (typ.) | 1.8 (typ.) | 758** |
| Model | Package | BVDSS (V) | IDSS (A) @ TJ=125C | VGS(th) (V) | IGSS (nA) @ VGS=20V | VSD (V) @ ISD=40A | trr (ns) | Qrr (nC) |
| HYG016N04LS1P/B | TO-220FB-3L | 40 | 50 | 1 - 3 | 100 | 0.8 - 1.2 | 42.2 | 42.1 |
| HYG016N04LS1P/B | TO-263-2L | 40 | 50 | 1 - 3 | 100 | 0.8 - 1.2 | 42.2 | 42.1 |
| Model | Package | RG () | Ciss (pF) | Coss (pF) | Crss (pF) | td(ON) (ns) | Tr (ns) | td(OFF) (ns) | Tf (ns) | Qg (nC) @ VGS=10V | Qg (nC) @ VGS=4.5V | Qgs (nC) | Qgd (nC) |
| HYG016N04LS1P/B | TO-220FB-3L | 1.8 | 5894 | 1276 | 53 | 17 | 76 | 78 | 101 | 92.5 | 43.6 | 22.7 | 15.4 |
| HYG016N04LS1P/B | TO-263-2L | 1.8 | 5894 | 1276 | 53 | 17 | 76 | 78 | 101 | 92.5 | 43.6 | 22.7 | 15.4 |
2411220155_HUAYI-HYG016N04LS1P_C2911693.pdf
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