Power MOSFET HUAYI HYG035N10NS2B Featuring Low On Resistance and High Current Handling Capability
Key Attributes
Model Number:
HYG035N10NS2B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
189pF
Number:
1 N-channel
Output Capacitance(Coss):
2.42nF
Input Capacitance(Ciss):
7.27nF
Pd - Power Dissipation:
220W
Gate Charge(Qg):
115nC@10V
Mfr. Part #:
HYG035N10NS2B
Package:
TO-263-2L
Product Description
Product Overview
The HYG035N10NS2P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications, DC-DC converters, and motor control. It features a low on-resistance of 3.2m (typ.) at VGS = 10V, 100% avalanche tested, and is available in lead-free and green (RoHS compliant) options. This device offers reliability and ruggedness for demanding applications.
Product Attributes
- Brand: HYM, HUAYI
- Origin: China
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Parameter | Value | Unit | Conditions |
|---|---|---|---|
| General Characteristics | |||
| Drain-Source Voltage (VDSS) | 100 | V | VGS=0V |
| Gate-Source Voltage (VGSS) | ±20 | V | |
| Junction Temperature Range (TJ) | -55 to 175 | °C | |
| Storage Temperature Range (TSTG) | -55 to 175 | °C | |
| Continuous Drain Current (ID) | 180 | A | Tc=25°C |
| Continuous Drain Current (ID) | 127 | A | Tc=100°C |
| Pulsed Drain Current (IDM) | 490 | A | Tc=25°C, Pulse width limited by max. junction temperature |
| Maximum Power Dissipation (PD) | 220 | W | Tc=25°C |
| Maximum Power Dissipation (PD) | 110 | W | Tc=100°C |
| Thermal Resistance, Junction-to-Case (RθJC) | 0.68 | °C/W | |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 62.5 | °C/W | Surface mounted on FR-4 board |
| Single Pulsed-Avalanche Energy (EAS) | 720 | mJ | L=0.3mH, Limited by TJmax, starting TJ=25°C, VDS=80V, VGS=10V |
| Static Characteristics | |||
| Drain-Source Breakdown Voltage (BVDSS) | 100 | V | VGS=0V, IDS=250μA |
| Drain-to-Source Leakage Current (IDSS) | 1.0 | μA | VDS=100V,VGS=0V, TJ=125°C |
| Gate Threshold Voltage (VGS(th)) | 2-4 | V | VDS=VGS, IDS=250μA |
| Gate-Source Leakage Current (IGSS) | ±100 | nA | VGS=±20V,VDS=0V |
| Drain-Source On-State Resistance (RDS(ON)) | 3.2 | mΩ | VGS=10V,IDS=50A, Typ. |
| Diode Characteristics | |||
| Diode Forward Voltage (VSD) | 0.88-1.3 | V | ISD=50A,VGS=0V |
| Reverse Recovery Time (trr) | 78 | ns | ISD=50A,dISD/dt=100A/μs |
| Reverse Recovery Charge (Qrr) | 192 | nC | |
| Dynamic Characteristics | |||
| Gate Resistance (RG) | 2.1 | Ω | VGS=0V,VDS=0V,F=1MHz |
| Input Capacitance (Ciss) | 7270 | pF | VGS=0V, VDS=50V, Frequency=500KHz |
| Output Capacitance (Coss) | 2420 | pF | VGS=0V, VDS=50V, Frequency=500KHz |
| Reverse Transfer Capacitance (Crss) | 189 | pF | VGS=0V, VDS=50V, Frequency=500KHz |
| Turn-on Delay Time (td(ON)) | 28 | ns | VDD=50V,RG=4Ω, IDS=50A,VGS=10V |
| Turn-on Rise Time (Tr) | 99 | ns | VDD=50V,RG=4Ω, IDS=50A,VGS=10V |
| Turn-off Delay Time (td(OFF)) | 70 | ns | VDD=50V,RG=4Ω, IDS=50A,VGS=10V |
| Turn-off Fall Time (Tf) | 85 | ns | VDD=50V,RG=4Ω, IDS=50A,VGS=10V |
| Gate Charge Characteristics | |||
| Total Gate Charge (Qg) | 115 | nC | VDS=80V, VGS=10V, ID=50A |
| Gate-Source Charge (Qgs) | 41 | nC | VDS=80V, VGS=10V, ID=50A |
| Gate-Drain Charge (Qgd) | 30 | nC | VDS=80V, VGS=10V, ID=50A |
| Package Information | |||
| Package Type | TO-220FB-3L, TO-263-2L | ||
| Ordering Information | HYG035N10NS2P/B | ||
2410121248_HUAYI-HYG035N10NS2B_C2763410.pdf
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