Low On Resistance N Channel MOSFET HUAYI HYG035N06LS1D with 65V Drain Source Voltage and 150A Current
Key Attributes
Model Number:
HYG035N06LS1D
Product Custom Attributes
Drain To Source Voltage:
65V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
112pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.687nF
Pd - Power Dissipation:
183W
Gate Charge(Qg):
76.3nC@10V
Mfr. Part #:
HYG035N06LS1D
Package:
TO-252-2
Product Description
Product Overview
The HYG035N06LS1D is a single N-Channel Enhancement Mode MOSFET designed for various applications. It features high current capability (150A continuous), low on-resistance (3.5 m typ. at VGS=10V), and is 100% avalanche tested for reliability. This device is suitable for load switching and motor drives in electric tools.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS compliant, Halogen-Free (Green)
- Package Type: TO-252-2L
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25Unless Otherwise Noted | - | - | 65 | V |
| Gate-Source Voltage | VGSS | - | - | +20/-12 | - | V |
| Junction Temperature Range | TJ | - | -55 | - | 175 | |
| Storage Temperature Range | TSTG | - | -55 | - | 175 | |
| Source Current-Continuous(Body Diode) | IS | Tc=25, Mounted on Large Heat Sink | - | - | 150 | A |
| Pulsed Drain Current | IDM | Tc=25 | - | - | 410 | A |
| Continuous Drain Current | ID | Tc=25 | - | - | 150 | A |
| Continuous Drain Current | ID | Tc=100 | - | - | 107 | A |
| Maximum Power Dissipation | PD | Tc=25 | - | - | 183 | W |
| Maximum Power Dissipation | PD | Tc=100 | - | - | 91.5 | W |
| Thermal Resistance, Junction-to-Case | RJC | - | - | 0.82 | - | /W |
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on FR-4 board. | - | 60.0 | - | /W |
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, starting TJ=25, VGS=10V | - | 209 | - | mJ |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250A | 65 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=65V,VGS=0V | - | - | 1 | A |
| Drain-to-Source Leakage Current | IDSS | TJ=125, VDS=65V,VGS=0V | - | - | 50 | A |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 1 | 1.5 | 3 | V |
| Gate-Source Leakage Current | IGSS | VGS=+20V/-12V,VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=20A | - | 3.5 | 4.0 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V,IDS=20A | - | 5.3 | 6.0 | m |
| Diode Forward Voltage | VSD* | ISD=20A,VGS=0V | - | 0.8 | 1.2 | V |
| Reverse Recovery Time | trr | ISD=10A,dISD/dt=100A/s | - | 42 | - | ns |
| Reverse Recovery Charge | Qrr | ISD=10A,dISD/dt=100A/s | - | 35 | - | nC |
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | - | 1.8 | - | |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 3687 | - | pF |
| Output Capacitance | Coss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 1610 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 112 | - | pF |
| Turn-on Delay Time | td(ON) | VDD=30V,RG=6, IDS=10A,VGS=10V | - | 15 | - | ns |
| Turn-on Rise Time | Tr | VDD=30V,RG=6, IDS=10A,VGS=10V | - | 29 | - | ns |
| Turn-off Delay Time | td(OFF) | VDD=30V,RG=6, IDS=10A,VGS=10V | - | 92 | - | ns |
| Turn-off Fall Time | Tf | VDD=30V,RG=6, IDS=10A,VGS=10V | - | 95 | - | ns |
| Total Gate Charge | Qg | VDS =48V, VGS=10V, ID=20A | - | 76.3 | - | nC |
| Total Gate Charge | Qg | VDS =48V, VGS=4.5V, ID=20A | - | 41.7 | - | nC |
| Gate-Source Charge | Qgs | VDS =48V, VGS=10V, ID=20A | - | 11.0 | - | nC |
| Gate-Drain Charge | Qgd | VDS =48V, VGS=10V, ID=20A | - | 23.0 | - | nC |
2411220241_HUAYI-HYG035N06LS1D_C2763403.pdf
Related Products
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
