N Channel MOSFET HUAYI HY3208AP with 120A Drain Current and Lead Free RoHS Compliant Green Versions
Key Attributes
Model Number:
HY3208AP
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-40℃~+175℃
RDS(on):
7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
346pF
Number:
1 N-channel
Output Capacitance(Coss):
539pF
Input Capacitance(Ciss):
3.68nF
Pd - Power Dissipation:
227W
Gate Charge(Qg):
97nC@10V
Mfr. Part #:
HY3208AP
Package:
TO-220FB
Product Description
Product Overview
The HY3208A is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a voltage rating of 80V and a continuous drain current of 120A. Key features include low on-state resistance (RDS(ON) = 5.5 m typ. @ VGS=10V), reliability, ruggedness, and availability in lead-free and green (RoHS compliant) versions. The device is 100% avalanche tested.
Product Attributes
- Brand: HUAYI
- Product Series: HY3208A
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
- Origin: China
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions | Min. | Typ. | Max. |
| Absolute Maximum Ratings | VDSS | 80 | V | ||||
| VGSS | ±25 | V | |||||
| TJ | 175 | °C | |||||
| TSTG | -55 to 175 | °C | |||||
| ID (TC=25°C) | 120 | A | Mounted on Large Heat Sink | ||||
| ID (TC=100°C) | 85 | A | |||||
| IDM (TC=25°C) | 3680 | A | Pulsed Drain Current | ||||
| PD (TC=25°C) | 227 | W | |||||
| PD (TC=100°C) | 113 | W | |||||
| Electrical Characteristics | BVDSS | 80 | V | VGS=0V, IDS=250μA | |||
| IDSS | 1 | μA | VDS= 80 V, VGS=0V | 10 | |||
| VGS(th) | 2.0 | V | VDS=VGS, IDS=250μA | 3.0 | 4.0 | ||
| IGSS | - | nA | VGS=±25V, VDS=0V | ±100 | |||
| RDS(ON) | - | mΩ | VGS=10V, IDS=60A | 5.5 | 7.0 | ||
| VSD | - | V | ISD=60A, VGS=0V | 0.8 | 1.0 | ||
| trr | - | ns | 46 | ||||
| Dynamic Characteristics | RG | - | Ω | VGS=0V,VDS=0V,F=1MHz | 0.6 | ||
| Ciss | - | pF | 539 | ||||
| Coss | - | pF | 346 | ||||
| Crss | - | pF | |||||
| Gate Charge Characteristics | Qg | - | nC | VDS=64V, VGS=10V, IDS=60A | 97 | ||
| Qgs | - | nC | 17 | ||||
| Qgd | - | nC | 34 |
Note: Detailed package dimensions and ordering information for specific models (TO-3PM-3S, TO-3PS-3L, TO-263-2L, TO-220FB-3S, TO-220FB-3L) are available in the original datasheet.
2411220228_HUAYI-HY3208AP_C357989.pdf
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