Power Management N Channel Enhancement Mode MOSFET HUAYI HY1606D with Low RDS ON and Avalanche Rating
Key Attributes
Model Number:
HY1606D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
66A
Operating Temperature -:
-55℃~+175℃
RDS(on):
12.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
370pF
Number:
1 N-channel
Output Capacitance(Coss):
760pF
Input Capacitance(Ciss):
2.04nF
Pd - Power Dissipation:
64W
Gate Charge(Qg):
51nC@10V
Mfr. Part #:
HY1606D
Package:
TO-252-2L
Product Description
Product Overview
The HY1606D/U/V is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers reliable and rugged performance with features like avalanche rating and low RDS(ON). Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS Compliant, Lead Free
Technical Specifications
| Model | Parameter | Test Conditions | Min. | Typ. | Max. | Unit | |
| HY1606D/U/V | Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 60 | V | ||||
| VGSS | Gate-Source Voltage | 25 | V | ||||
| TJ | Maximum Junction Temperature | 175 | C | ||||
| TSTG | Storage Temperature Range | -55 | 175 | C | |||
| ID | Continuous Drain Current | TC=100C | 32 | A | |||
| IDM | Pulsed Drain Current | TC=25C | 200 | A | |||
| PD | Maximum Power Dissipation | TC=25C | 66 | W | |||
| RJC | Thermal Resistance-Junction to Case | 2.35 | C/W | ||||
| RJA | Thermal Resistance-Junction to Ambient | Mounted on Large Heat Sink | 66 | C/W | |||
| EAS | Drain-Source Avalanche Energy | L=0.5mH | 60 | mJ | |||
| Static Characteristics | |||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250A | 60 | V | |||
| IDSS | Zero Gate Voltage Drain Current | VDS=60V, VGS=0V | 1 | A | |||
| IDSS | Zero Gate Voltage Drain Current | TJ=85C | 10 | A | |||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250A | 2 | 3 | 4 | V | |
| IGSS | Gate Leakage Current | VGS=25V, VDS=0V | 100 | nA | |||
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, IDS=33A | 10.4 | 12.5 | m | ||
| Diode Characteristics | |||||||
| VSD | Diode Forward Voltage | ISD=33A, VGS=0V | 0.8 | 1.2 | V | ||
| trr | Reverse Recovery Time | ISD=33A, dlSD/dt=100A/s | 33 | ns | |||
| Qrr | Reverse Recovery Charge | ISD=33A, dlSD/dt=100A/s | 61 | nC | |||
| Dynamic Characteristics | |||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 0.9 | ||||
| Ciss | Input Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | 17 | pF | |||
| Coss | Output Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | 370 | pF | |||
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | 760 | pF | |||
| td(ON) | Turn-on Delay Time | VDD=30V, RG=5, IDS=33A, VGS=10V | 11 | ns | |||
| Tr | Turn-on Rise Time | VDD=30V, RG=5, IDS=33A, VGS=10V | 51 | ns | |||
| td(OFF) | Turn-off Delay Time | VDD=30V, RG=5, IDS=33A, VGS=10V | 13 | ns | |||
| Tf | Turn-off Fall Time | VDD=30V, RG=5, IDS=33A, VGS=10V | 20 | ns | |||
| Gate Charge Characteristics | |||||||
| Qg | Total Gate Charge | VDS=48V, VGS=10V, IDS=33A | 17 | nC | |||
| Qgs | Gate-Source Charge | VDS=48V, VGS=10V, IDS=33A | 370 | nC | |||
| Qgd | Gate-Drain Charge | VDS=48V, VGS=10V, IDS=33A | 760 | nC | |||
2410121740_HUAYI-HY1606D_C357977.pdf
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