Power MOSFET HUAYI HY3810NA2P with 100 Volt Drain Source Voltage and RoHS Compliant Lead Free Design
Key Attributes
Model Number:
HY3810NA2P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
4.3mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
319pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
7.409nF@50V
Pd - Power Dissipation:
348W
Gate Charge(Qg):
159.2nC@10V
Mfr. Part #:
HY3810NA2P
Package:
TO-220FB-3L
Product Description
Product Overview
The HY3810NA2P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features high voltage (100V) and current (180A) capabilities, a low on-resistance of 4.3m (typ.) at VGS = 10V, and is 100% avalanche tested for reliability. This product is available in lead-free and green (RoHS compliant) versions, suitable for demanding applications like Uninterruptible Power Supplies and Motor Control.
Product Attributes
- Brand: HUAYI
- Model: HY3810NA2P/B
- Certifications: RoHS Compliant, Lead-Free, Green (Lead-free and halogen-free)
- Material: Molding compounds/die attach materials and 100% matte tin plate Termination finish (for lead-free products)
Technical Specifications
| Parameter | Test Conditions | HY3810NA2 Unit | Min | Typ. | Max |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | Tc=25C Unless Otherwise Noted | V | - | - | 100 |
| Gate-Source Voltage (VGSS) | Tc=25C Unless Otherwise Noted | V | - | - | ±25 |
| Maximum Junction Temperature (TJ) | Tc=25C Unless Otherwise Noted | °C | -55 | - | 175 |
| Storage Temperature Range (TSTG) | Tc=25C Unless Otherwise Noted | °C | -55 | - | 175 |
| Source Current-Continuous (IS) | Body Diode, Tc=25°C, Mounted on Large Heat Sink | A | - | - | 180 |
| Pulsed Drain Current (IDM) | Tc=25°C | A | - | - | 590 |
| Continuous Drain Current (ID) | Tc=25°C | A | - | - | 180 |
| Continuous Drain Current (ID) | Tc=100°C | A | - | - | 127 |
| Maximum Power Dissipation (PD) | Tc=25°C | W | - | - | 348 |
| Maximum Power Dissipation (PD) | Tc=100°C | W | - | - | 174 |
| Thermal Resistance, Junction-to-Case (RθJC) | - | °C/W | - | 0.43 | - |
| Thermal Resistance, Junction-to-Ambient (RθJA) | Surface mounted on FR-4 board. | °C/W | - | 62 | - |
| Single Pulsed-Avalanche Energy (EAS) | L=0.3mH | mJ | - | 856.5 | - |
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250μA | V | 100 | - | - |
| Drain-to-Source Leakage Current (IDSS) | VDS=100V,VGS=0V | μA | - | - | 1.0 |
| Drain-to-Source Leakage Current (IDSS) | TJ=125°C | μA | - | - | 50 |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250μA | V | 2 | 3 | 4 |
| Gate-Source Leakage Current (IGSS) | VGS=±20V,VDS=0V | nA | - | - | ±100 |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=50A | mΩ | - | 4.3 | 5.5 |
| Diode Forward Voltage (VSD) | ISD=50A,VGS=0V | V | - | 0.86 | 1.3 |
| Reverse Recovery Time (trr) | ISD=50A,dISD/dt=100A/μs | ns | - | 45.9 | - |
| Reverse Recovery Charge (Qrr) | - | nC | - | 91.7 | - |
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | Ω | - | 1.5 | - |
| Input Capacitance (Ciss) | VGS=0V, VDS=50V, Frequency=1.0MHz | pF | - | 7409 | - |
| Output Capacitance (Coss) | - | pF | - | 556 | - |
| Reverse Transfer Capacitance (Crss) | - | pF | - | 319 | - |
| Turn-on Delay Time (td(ON)) | VDD=50V,RG=2.5Ω, IDS=50A,VGS=10V | ns | - | 26.4 | - |
| Turn-on Rise Time (Tr) | - | ns | - | 97.3 | - |
| Turn-off Delay Time (td(OFF)) | - | ns | - | 64.2 | - |
| Turn-off Fall Time (Tf) | - | ns | - | 102.7 | - |
| Total Gate Charge (Qg) | VDS=80V, VGS=10V, ID=50A | nC | - | 159.2 | - |
| Gate-Source Charge (Qgs) | - | nC | - | 41.5 | - |
| Gate-Drain Charge (Qgd) | - | nC | - | 58.9 | - |
2411220146_HUAYI-HY3810NA2P_C721440.pdf
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